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Articles by author: J.R. Leite

• Bistability of Iron-Group III Acceptor Pairs in Silicon
  Published in: Defects in Semiconductors 15 (p409)
• Electronic States of Fe₄ and Mn₄ Clusters in Silicon
  Published in: Defects in Semiconductors 16 (p221)
• Electronic States of n-Type δ-Doping in GaAs Heterostructures
  Published in: Defects in Semiconductors 17 (p669)
• Electronic Structure of Be-Doped GaAs
  Published in: Shallow Impurities in Semiconductors IV (p369)
• Electronic Structure of Transition-Metal Impurities in GaAs_1-xP_x Alloys
  Published in: Defects in Semiconductors 16 (p707)
• Green's-Function Calculation of the Formation Entropy of a Vacancy in Silicon
  Published in: Defects in Semiconductors 15 (p263)
• Group-IV Impurity Related Centers in GaAs
  Published in: Defects in Semiconductors 15 (p833)
• Micro-Raman and Electron Microscopy Analysis of Cubic GaN Layers on (001) GaAs
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1367)
• Resonant Raman Scattering and the Emission Process in Zincblende-In_xGa_1-xN
  Published in: Silicon Carbide and Related Materials - 1999 (p1595)
• Surface Reconstruction and MBE Growth of Cubic GaN on (001) GaAs: A Total Energy Study
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1197)
• Theoretical Interpretation of EPR Measurements on the Iron-Shallow Acceptor Pairs in Silicon
  Published in: Defects in Semiconductors 16 (p143)
• Theoretical Investigation of Deep Level Complexes Related to Carbon and Oxygen Impurities in Silicon
  Published in: Defects in Semiconductors 14 (p905)
• Theoretical Model of Transition Metal-Shallow Acceptor Impurity Pairs in Silicon
  Published in: Defects in Semiconductors 14 (p55)