Papers by Author: Jae Yong Jung

Abstract: Sn-doped CoSb3 skutterudites were prepared by encapsulated induction melting and their electronic transport properties were examined. The Sn dopant generated excess charge carriers, which increased in concentration with increasing Sn doping content. However, the carrier mobility decreased with increasing doping content, indicating a decrease in the hole mean free path by impurity scattering. The Seebeck coefficient decreased and the electrical resistivity decreased slightly with increasing the carrier concentration due to the reduced carrier mobility by impurity scattering. The lattice thermal conductivity was dominant in the Sn-doped CoSb3 skutterudites.

Abstract: In-filled CoSb3 skutterudites (InzCo4Sb12) were prepared and the filling effects on the thermoelectric and transport properties were examined. Seebeck coefficient and Hall coefficient confirmed that all the samples showed n-type conductivity. Temperature dependence of the electrical resistivity suggested that InzCo4Sb12 is a highly degenerate semiconducting material. The thermal conductivity was considerably reduced by In filling and the lattice contribution was dominant.

Abstract: The encapsulated induction melting was attempted to prepare the Sn-filled CoSb3 skutterudites and their electronic transport properties were investigated. Single phase δ-CoSb3 was successfully obtained by the subsequent isothermal heat treatment at 823K for 6 days in vacuum. The Sn-filled CoSb3 showed p-type conductivity at 300K to 700K at it is a highly degenerate semiconductor. Lattice contribution was dominant to thermal conductivity and it was considerably reduced by Sn filling in the CoSb3 skutterudite.