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Articles by author: Jean Marie Bluet

• Al and Al/C High Dose Implantation in 4H-SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p885)
• Application of UV Scanning Photoluminescence Spectroscopy for Minority Carrier Lifetime Mapping
  Published in: Silicon Carbide and Related Materials - 2002 (p349)
• Boron Doping during Vapor-Liquid-Solid Growth of Homoepitaxial 4H-SiC Layers
  Published in: Silicon Carbide and Related Materials 2006 (p65)
• Characterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane System
  Published in: Silicon Carbide and Related Materials - 2002 (p165)
• Characterizations of SiC/SiO₂ Interface Quality Toward High Power MOSFETs Realization
  Published in: Silicon Carbide and Related Materials 2003 (p1281)
• Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates
  Published in: Silicon Carbide and Related Materials 2003 (p1185)
• Defects Characterization in SiC by Scanning Photoluminescence Spectroscopy
  Published in: Silicon Carbide and Related Materials 2000 (p393)
• Enlargement of SiC Crystals: Defect Formation at the Interfaces
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p45)
• Epitaxial Growth of 4H-SiC with Hexamethyldisilane HMDS
  Published in: Silicon Carbide and Related Materials 2001 (p263)
• Epitaxial Growth on Metal Bonded SiC Substrates: Transmission Electron Microscopy and Photoluminescence
  Published in: Silicon Carbide and Related Materials 2006 (p255)
• Experimental Investigation of 4H-SiC Bulk Crystal Growth
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p17)
• Formation, Morphology and Optical Properties of SiC Nanopowder
  Published in: Silicon Carbide and Related Materials 2005 (p763)
• Hole-Like Defects in n-Channel 4H-SiC MESFETs Observed by Current Transient Spectroscopy
  Published in: Silicon Carbide and Related Materials 2004 (p865)
• Influence of Semi-Insulating Substrate Purity on the Output Characteristics of 4H-SiC MESFETs
  Published in: Silicon Carbide and Related Materials 2001 (p1363)
• Infrared Investigation of Implantation Damage and Implantation Damage Annealing in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p385)