Papers by Author: Jin Suk Wang

Abstract: In this paper, novel Ni Germanosilicide technology using the 1%-nitrogen doped Ni and pure Ni stack structure has been proposed for nano-scale CMOS technology. The Ni Germanosilicide is formed on the Si0.8Ge0.2 layer which is known as an optimal composition for strained silicon application. Proposed structure showed much better thermal stability than pure Ni case. Silicide characteristics such as the sheet resistance, the interface uniformity of silicide/SiGe, surface roughness, and depth profile of the Ni, Si, and Ge showed little degradation even with the high temperature post-silicidation annealing at 600
for 30 min. Therefore, the proposed method is highly promising for nano-scale CMOS technology.

Abstract: In this paper, the electrical properties of NiSi have been characterized using multi capping layer structure for nano CMOS application. We have investigated the formation and thermal stability of Ni silicide using Ni, Ti and TiN capping layers (Ti/Ni/TiN) as a function of Rapid Thermal Processing (RTP) temperature. It was shown that the NiSi with multi capping layer has lower sheet resistances than that with single capping (TiN) layer. NiSi with multi capping layer also showed much better thermal stability. It was verified that the formation Ni-Ti-Si ternary like layer at the top region of thhe NiSi results in improvement of thermal stability.