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Articles by author: Jonathan P. Goss

• A First Principles Study of Interstitial Si in Diamond
  Published in: Defects in Semiconductors 19 (p781)
• Breakdown of the Vacancy Model for Impurity-Vacancy Defects in Diamond
  Published in: Defects in Semiconductors 19 (p775)
• Density Functional Simulations of Physisorbed and Chemisorbed Single Graphene Layers on 4H-SiC (0001), (000-1) and 4H-SiC:H Surface
  Published in: Silicon Carbide and Related Materials 2009 (p619)
• Density Functional Simulations of Transition Metal Terminated (001)-Diamond Surfaces
  Published in: Silicon Carbide and Related Materials 2011 (p1311)
• DFT Analysis of the Indium-Antimony-Vacancy Cluster in Silicon
  Published in: Defects and Diffusion in Semiconductors - an Annual Retrospective VIII (p29)
• H Interacting with Intrinsic Defects in Si
  Published in: Defects in Semiconductors 18 (p933)
• Influence of Intercalated Silicon on the Transport Properties of Graphene
  Published in: Silicon Carbide and Related Materials 2010 (p793)
• Local Solid Phase Epitaxy of Few-Layer Graphene on Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2011 (p629)
• Ni Complexes in Diamond
  Published in: Defects in Semiconductors 18 (p67)
• Structure and Electronic Properties of Nitrogen Defects in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p93)
• Temperature Dependent Chemical Sensitivity of Epitaxial Graphene
  Published in: Silicon Carbide and Related Materials 2011 (p691)
• The H₂* Defect in Crystalline Germanium
  Published in: Defects in Semiconductors 18 (p879)
• The Hydrogen-Saturated Self-Interstitial in Silicon and Germanium
  Published in: Defects in Semiconductors 19 (p35)
• The Interaction of Hydrogen with Deep Level Defects in Silicon
  Published in: Special Defects in Semiconducting Materials (p173)
• The NNO Defect in Silicon
  Published in: Defects in Semiconductors 18 (p791)