Papers by Author: Jun Xing Liu

Abstract: Metal-oxide-semiconductor (MOS) structure is highly sensitive to SiO₂-Si interface. It will reflect parameters such as interface density and oxide layer charge expediently. For the sake of researching of radiation effect of MOS structure irradiated by electron, we adopted 0.8 MeV electron at dosage between 2×10¹³ cm^-2~1×10¹⁴ cm^-2 as radiation source respectively. We found that electron radiation will induce interface density at SiO₂-Si interface. According to comparison with C-V curve of MOS structure at high frequency and low frequency, we obtain that the experimental data of interface density is up to 10¹⁴(cm^-2eV^-1). In addition, we also obtain the relationship between the parameter and radiation dosage.

Abstract: A new structure of a-Si/ poly-Si tandem solar cell has been desiged and prepared. Amorphous silicon has been use as photovoltaic material of bottom cell. And polysilicon has been used as photovoltaic material of bottom cell.The combination of amorphous silicon and polysilicon extends the light range which can be used by solar cell. This structure improves the efficiency of solar cell greatly.

Abstract: ×MOS structure has been radiated by electron, dosage is 2×10¹³ cm^-2 ~ 1×10¹⁴ cm^-2. The interface density distributing in energy band has been tested by quasi-static method. It is found that interface density increase while electron dosage increasing. When dosage arrived to 1×10¹⁴ cm^-2, interface density arrives to 10¹³(cm^-2eV^-1),which is two order of magnitude higher than without irradiation. Further more, the shapes of density increase curve are completely different.