Papers by Author: K. Mergia

Abstract: In plasma facing components (PFC) for nuclear fusion reactors tungsten or carbon based tiles need to be cooled through a heat sink. The joint between the PFC and the heat sink can be realized using a brazing process through the employment of compliant layer of either a low yield material, like copper, or a high yield material, like molybdenum. Experimental verification of the induced stresses during the brazing process is of vital importance. Strains and residual stresses have been measured in Mo/CuCrZr brazed tiles using neutron diffraction. The strains and stresses were measured in Mo tile along the weld direction and at different distances from it. The experimental results are compared with Finite Element Simulations.

Abstract: A graphite sheet has been successfully brazed to a Nimonic 105 superalloy using a commercial TiCuSil paste. A chromium layer was deposited on the graphite surface by sputtering and controlled heat treatments were employed in order to develop a suitable microstructure. Scanning electron microscopy measurements showed rough, crack-free interfaces between the filler metal and both the graphite and nimonic parts. From metallographic examination a well defined layered structure of the metallic elements close to the filler/graphite interface has been found. The metallic elements transport from the interface to the carbon bulk where they fill all the graphite pores up to a depth up of 50 μm and form a layered structure within the pores.

Abstract: The use of ceramic composite materials in aerospace applications requires the development of oxidization protection coatings which can withstand very high temperatures. HfO2 is a promising material as a high temperature oxidization protective layer. HfO2 coatings have been deposited by radiation frequency magnetron sputtering all over the surface of SiC substrates and were tested under re-entry conditions. Also their oxidization resistance in air in the temperature range 1100 to 1450°C has been examined. The coatings were found to be stable and well-adhering to the substrate even after 100 re-entry cycles. No oxidization of the underlying SiC structure is observed. Re-entry and oxidization tests result in the formation of HfSiO4 at the HfO2/SiC interface, which further promotes their oxidization resistance.