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Articles by author: Katsunori Danno

• Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer
  Published in: Silicon Carbide and Related Materials 2009 (p351)
• Complete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes
  Published in: Silicon Carbide and Related Materials - 2002 (p197)
• Deep Hole Traps in As-Grown 4H-SiC Epilayers Investigated by Deep Level Transient Spectroscopy
  Published in: Silicon Carbide and Related Materials 2005 (p501)
• Deep Levels in Electron-Irradiated n- and p-type 4H-SiC Investigated by Deep Level Transient Spectroscopy
  Published in: Silicon Carbide and Related Materials 2006 (p331)
• Diffusion and Gettering of Transition Metals in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2011 (p225)
• Dislocation Analysis in Highly Doped n-Type 4H-SiC by Using Electron Beam Induced Current and KOH+Na₂O₂ Etching
  Published in: Silicon Carbide and Related Materials 2010 (p294)
• Dislocation Revelation in Highly Doped N-Type 4H-SiC by Molten KOH Etching with Na₂O₂ Additive
  Published in: Silicon Carbide and Related Materials 2010 (p290)
• Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy
  Published in: Silicon Carbide and Related Materials 2007 (p417)
• Fast Epitaxial Growth of Thick 4H-SiC with Specular Surface by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2003 (p205)
• Growth and Electrical Characterization of 4H-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2006 (p35)
• High-Speed Growth of High-Purity Epitaxial Layers with Specular Surface on 4H-SiC(000-1) Face
  Published in: Silicon Carbide and Related Materials 2003 (p197)
• High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt
  Published in: Silicon Carbide and Related Materials 2009 (p13)
• Low Trap Concentration and Low Basal-Plane Dislocation Density in 4H-SiC Epilayers Grown at High Growth Rate
  Published in: Silicon Carbide and Related Materials 2006 (p129)
• Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS
  Published in: Silicon Carbide and Related Materials 2004 (p355)
• Shallow Defects Observed in As-Grown and Electron-Irradiated or He⁺-Implanted Al-Doped 4H-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2009 (p427)