Papers by Author: Kazuhiro Hasezaki

Abstract: A Bi2Te3-based thermoelectric semiconductor was subjected by high pressure torsion (HPT). Sample disks of p-type Bi0.5Sb1.5Te3.0 were cut from sintered compacts that were made by mechanically alloying (MA) followed by hot pressing. Disks were subjected by HPT with 1, 5 and 10 turns at 473 K under 6.0 GPa of pressure. Crystal orientation was investigated by X-ray diffraction. Microstructures were characterized using scanning electron microscopy. Results indicated that HPT disks after 5 turns had a preferred orientation and a fine grain compared with pre-HPT disks while the orientation factor was decreased after HPT using 10 turns. The power factor had a maximum value at 5 turns as determined by measuring its thermoelectric properties. A maximum power factor of 4.30×10-3 Wm-1K-2 was obtained for HPT disks after 5 turns. This value was larger than that for the pre-HPT disk. The over-HPT of 10 turns was found to have caused a decrease in the preferred orientation leading to a low power factor.

Abstract: The NbSi2/Nb/-TiAl and NbSi2/Nb functionally graded materials (FGMs) were prepared and their tolerances tested by exposing them to temperatures from 1050 °C to 1250 °C under vacuum and in air. Oxygen resistivity was estimated from metallographic investigations. The FGM lifetime was estimated by using a diffusion equation that considers the disappearance of the NbSi2 and Nb interlayer. These occurred during NbSi2 oxidation and Si diffusion from NbSi2 to Nb and interdiffusion between Nb and -TiAl. The results were validated by diffusion equations.

Abstract: Several diamond coatings were performed on -TiAl substrates by a microwave-plasma assisted CVD, which were made directly to the substrate and indirectly to the TiC, Ti5Si3, Al2O3+TiO2 and Si layers on the substrate. The direct coatings suffered from severe delamination and cracks. The deposited layers on TiC and Ti5Si3 layers partially delaminated, while those on Al2O3+TiO2 and Si layers adhered well without delamination. All the diamond films deposited were characterized using scanning electron microscopy, Raman spectroscopy, and X-ray diffraction. Raman spectra showed that poly- and nano-crystalline diamond films were obtained for the coatings of -TiAl.

Abstract: Minimum interlayer numbers of functionally graded materials (FGMs) are studied based on the empirical analysis of thermal stress due to the differences in the thermal expansion coefficient  and temperature T between sintering and room temperatures. It is found the maximum ,   and the minimum interlayer number necessary to produce a NiCr / Fly ash FGM structure without interface cracking were 4.0×10-6 K-1, 1080 K, 0.043 and 2, respectively. The condition  < 0.043 was derived and confirmed to be valid for available FGM systems.

Abstract: Prepared were p-type Bi2Te3-based thermoelectric semiconductors, having a grain-refined microstructure and a preferred orientation of anisotropic crystallographic structure. Disks with a nominal composition Bi0.5Sb1.5Te3.0 were cut from an ingot grown by the vertical Bridgman method (VBM) and deformed at 473 K under a pressure of 6.0 GPa by high pressure torsion (HPT). The crystal orientation was characterized with X-ray diffraction. The microstructures were characterized by using optical microscopy and scanning electron microscopy. It was found that the HPT disks had a fine and preferentially oriented grain compared to that of the VBM disks. Further, the power factor of the HPT disks was about twice as large as that of the VBM disks. These results indicate that HPT is effective for improving the thermoelectric properties of Bi2Te3-based thermoelectric semiconductors.