Papers by Author: Krystyna Gołaszewska

Abstract: In this work the electrical properties of Ni and Ni₂Si contacts on n-type 4H-SiC were correlated to the strong structural changes at the contact/SiC interface upon annealing. We can conclude that only δ-Ni₂Si grains play a main role in determining electrical transport properties of the Ni-based ohmic contacts to n-SiC. It is presumed that a recrystallization and texturization of δ-Ni₂Si phase on (0001)SiC-surface during high temperature annealing (> 900°C) contributes to the change of barrier heights, as well as specific contact resistance of contacts.

Abstract: The stability of Au wire connections to n-SiC/Ti ohmic contacts and to n-SiC/Ni ohmic contacts with top Au or Pt layers has been investigated. Long-term tests of the connections are performed in air at 400oC. Evaluation of electrical parameters, morphology and structure of the metallization as well as the strength of Au joint show stable Au wire bonds to the metallization with Ti-ohmic contacts.

Abstract: The kinetics of 4H-SiC thermal oxidation by RTP technique and the properties of thin thermal oxide was reported. The thickness of the thermal oxide was determined by spectroscopic ellipsometry and confirmed by electrical measurements. The conductance method was applied to analyse the surface states parameters. The lifetime, density and cross-section of the surface traps were extracted for as-fabricated MOS capacitors and after thermal annealing processes.