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Articles by author: L. Dobaczewski

• Anisotropy and Isotropy of Electric Field Effects for the EL2 and E3 Defects in GaAs
  Published in: Defects in Semiconductors 15 (p113)
• DX-Like Centres in Semiconductors: Metastability, Bistability and Negative U
  Published in: Shallow Impurities in Semiconductors IV (p433)
• Electronic Properties and Thermal Stability of Defects Induced by MeV Electron/Ion Irradiations in Unstrained Germanium and SiGe Alloys
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p253)
• Environmental Effects in DX (Te) Centers in GaAlAs
  Published in: Defects in Semiconductors 14 (p399)
• Fine Structure Observed in Thermal Emission Process for the EL2 Defect in GaAs
  Published in: Defects in Semiconductors 17 (p1001)
• Formation Kinetics of the Al-Related Shallow Thermal Donors: A Probe for Oxygen Diffusion in Silicon
  Published in: Defects in Semiconductors 19 (p1761)
• High Resolution DLTS Studies of Transition-Metal-Related Defects in Silicon
  Published in: Defects in Semiconductors 18 (p669)
• Laplace Transform DLTS Studies of the DX Centers in GaSb and AlGaAs
  Published in: Defects in Semiconductors 16 (p769)
• Negative-U Aspects of DX-Center in Al_x-Ga_1-xAs
  Published in: Physics of DX Centers in GaAs Alloys (p233)
• Polaron Coupling for Sulphur Impurity in GaSb
  Published in: Defects in Semiconductors 19 (p1241)
• Silicon-Related Local Vibrational Mode Absorption in Bulk AlGaAs
  Published in: Defects in Semiconductors 18 (p1091)
• Static and Dynamic Absorption Measurements of the DX Center in Al_xGa_1-xAs
  Published in: Defects in Semiconductors 17 (p1093)
• Tracing Diffusion by Laplace Deep-Level Spectroscopy
  Published in: Defects in Semiconductors 19 (p337)