Papers by Author: M.E. Kompan

Abstract: A microscopic mechanism of the self-formation of a dense pore system in the porous silicon is proposed. According to it, the process of porous silicon self-formation is dictated by the laws of dynamics for a charge carriers system. The proposed mechanism is proved by the results of computer simulation. The values of inter-pore separation distance in p-type based porous material and anodization current threshold density are evaluated; the dependence of an inter-pore separation distance on the carriers concentration, close to n^-1/2, is predicted.