HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Marco Mauceri

• 3C-SiC Heteroepitaxial Growth on Inverted Silicon Pyramids (ISP)
  Published in: Silicon Carbide and Related Materials 2009 (p135)
• 3C-SiC Heteroepitaxy on (100), (111) and (110) Si Using Trichlorosilane (TCS) as the Silicon Precursor.
  Published in: Silicon Carbide and Related Materials 2007 (p243)
• Bow in 6 Inch High-Quality Off-Axis (111) 3C-SiC Films
  Published in: Silicon Carbide and Related Materials 2009 (p167)
• Carbonization Study of Different Silicon Orientations
  Published in: Silicon Carbide and Related Materials 2006 (p171)
• Defects in He⁺ Irradiated 6H-SiC Probed by DLTS and LTPL Measurements
  Published in: Silicon Carbide and Related Materials 2003 (p493)
• Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes
  Published in: Silicon Carbide and Related Materials 2004 (p429)
• Epitaxial Deposition of Silicon Carbide Films in a Horizontal Hot-Wall CVD Reactor
  Published in: Silicon Carbide and Related Materials 2004 (p57)
• Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process
  Published in: Silicon Carbide and Related Materials 2005 (p163)
• Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides Route
  Published in: Silicon Carbide and Related Materials 2006 (p93)
• New Achievements on CVD Based Methods for SiC Epitaxial Growth
  Published in: Silicon Carbide and Related Materials 2004 (p67)
• On the “Step Bunching” Phenomena Observed on Etched and Homoepitaxially Grown 4H Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2010 (p358)
• Optimisation of Epitaxial Layer Growth by Schottky Diodes Electrical Characterization
  Published in: Silicon Carbide and Related Materials 2005 (p199)
• Optimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical Characterization
  Published in: Silicon Carbide and Related Materials 2006 (p137)
• Schottky-Ohmic Transition in Nickel Silicide/SiC System: Is it Really a Solved Problem?
  Published in: Silicon Carbide and Related Materials - 2002 (p721)
• Schottky-Ohmic Transition in Nickel Silicide/SiC-4H System: the Effect of Non Uniform Schottky Barrier
  Published in: Silicon Carbide and Related Materials 2003 (p861)