Papers by Author: Martin J. Hÿtch

Abstract: Strains around a constricted matrix dislocation in a coherent twin grain boundary in germanium is measured by a combination of high-resolution electron microscopy and geometric phase analysis. Whilst strains in the grains on either side of the twin boundary agree closely with the isolated dislocation case, significant additional strains are localized at the boundary plane. By comparing the stresses and strains across the boundary plane, values for the elastic modulus of the twin boundary are determined. They are found to exhibit a drastic decrease as compared to the bulk and this is interpreted in terms of the non-equilibrium configuration of the boundary.

Abstract: In this work, we present a detailed structural characterization of the defects formed after 0.5 keV B+ implantation into Si to a dose of 1x1015 ions/cm2 and annealed at 650°C and 750°C during different times up to 160 s. The clusters were characterized by making use of Weak Beam and High Resolution Transmission Electron Microscopy (HRTEM) imaging. They are found to be platelets of several nanometer size with (001) habit plane. Conventional TEM procedure based on defect contrast behavior was applied to determine the directions of their Burger’s vectors. Geometric Phase Analysis of HRTEM images was used to measure the displacement field around these objects and, thus, to unambiguously determine their Burger’s vectors. Finally five types of dislocation loops lying on (001) plane are marked out: with ] 001 [1/3 ≅ b and b ∝ [1 0 1], [-1 0 1], [0 1 1], [0 -1 1].

Abstract: Based on the Taylor theory, a critical length scale is defined as the minimum dislocations cell size obtained at the maximum work-hardening for metals and alloys. When grain size is smaller than this length scale, corresponding also to a critical dislocation mean free path, new behaviours occur; such as ductility and strength, near perfect elasto-plasticity, high strain-rate sensitivity. Bulk samples are fabricated from Cu nanopowders (particle size 50 nm) by powder metallurgy techniques. The final grain size is comprised between the critical mean free path, evaluated at 130 nm and the size where transition to the so-called nano regime occurs (when unit dislocation no longer exists below 30 nm for Cu). Tensile tests are carried and microstructural analysis are performed before and after deformation.

Abstract: The geometric phase technique (GPA) for measuring the distortion of crystalline lattices from high-resolution electron microscopy (HRTEM) images will be described. The method is based on the calculation of the “local” Fourier components of the HRTEM image by filtering in Fourier space. The method will be illustrated with a study of an edge dislocation in silicon where displacements have been measured to an accuracy of 3 pm at nanometre resolution as compared with anisotropic elastic theory calculations. The different components of the strain tensor will be mapped out in the vicinity of the dislocation core and compared with theory. The accuracy is of the order of 0.5% for strain and 0.1° for rigid-body rotations. Using bulk elastic constants for silicon, the stress field is determined to 0.5 GPa at nanometre spatial resolution. Accuracy and the spatial resolution of the technique will be discussed.