Papers by Author: Michael Kolbe

Abstract: The European Integrated Activity of Excellence and Networking for nanoand Micro-Electronics Analysis (ANNA), www.ANNA-i3.net, has addressed the further development and assessment of methodologies for the detection of low concentration inorganic contaminants on and in silicon as well as for novel materials. The comparison of various analytical techniques available to the ANNA partners helped to identify the degree of comparableness of results revealed at different installations. The assessment of improved methodologies as well as the reliability of quantification and calibration procedures of specific analytical techniques such as Total-Reflection X-ray Fluorescence (TXRF) analysis has been of particular interest.

Abstract: The last decennia, a lot of effort has been made to introduce new channel materials in a Si process flow. High mobility materials such as Ge need a good gate stack passivation in order to ensure optimal MOSFET operation. Several routes for passivating the Ge gate stack have been explored in the last years. We present here the S-passivation of the Ge gate stack: (NH₄)₂S is used to create a S-terminated Ge surface. In this paper the S-treatment is discussed. The S-terminated Ge surface is not chemically passive but can still react with air. After gate oxide deposition, the Ge-S bonds are preserved and an adequate passivation is found for pMOS operation.

Abstract: The formation of self-assembled monolayers (SAMs) by specific organic molecules with appropriate anchor groups on semiconductor surfaces may be used to probe the chemical state and quality of the surface or to achieve surface passivation. Molecules with thiol anchor groups are able to bond to hydrogen-terminated germanium surfaces (Ge-S bond). We have prepared SAMs of alkylthiols with different head groups on germanium. Since the surface preparation of germanium is neither well understood nor developed, the controlled preparation of an oxide-free completely H-terminated surface which is a prerequisite for SAM formation of alkylthiols turned out to be a major challenge. Several approaches have been studied. The characterization of the germanium surface prior to and after SAMs formation has been performed by AFM, XPS, Synchrotron-TXRF and -NEXAFS.

Abstract: As the detection of inorganic contaminants is of steadily increasing importance for the improvement of yields in microelectronic applications, the aim of one of the joint research activity within the European Integrated Activity of Excellence and Networking for Nano- and Micro-Electronics Analysis (ANNA, site: www.ANNA-i3.org) is the development and assessment of new methodolo¬gies and metrologies for the detection of low concentration inorganic contaminants in silicon and in novel materials. A main objective consist in the benchmarking of various analytical techniques avail¬able in the laboratories of the participating ANNA partners, including the improvement of the res¬pective detection limits as well as the quantitation reliablity of selected analytical techniques such as total-reflection x-ray fluorescence (TXRF) analysis.