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Papers by Author: Mieko Matsumura

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Direct Observation of Dielectric Breakdown at Step-Bunching on 4H-SiC

Authors: Yuki Mori, Mieko Matsumura, Hirotaka Hamamura, Toshiyuki Mine, Akio Shima, Renichi Yamada, Yasuhiro Shimamoto

Abstract: The mechanism of dielectric breakdown of oxide on step-bunching of 4H-silicon carbide (SiC) was investigated. Comparing the surface morphology obtained before forming metal-oxide-semiconductor (MOS) capacitor and optical emission on the capacitor under electrical stress, it was cleared that current concentrates on step-bunching and it often caused preferential dielectric breakdown. Based on TEM analysis and the observation of time dependence of emission under the stress, a new model was proposed to explain the dielectric breakdown on step-bunching.

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Poly-Si Thin-Film Transistors Robust Against Hot-Carrier Stress and Application to Liquid Crystal Displays Fabricated by a 450°C Process

Authors: Takeo Shiba, Mutsuko Hatano, Mieko Matsumura, Yoshiaki Toyota, Yoshiharu Tai, Makoto Ohkura, Toshio Miyazawa, Toshihiko Itoga