Papers by Author: Mike Andersson

Abstract: Gas sensitive metal/metal-oxide field effect transistors based on silicon carbide were used to study the sensor response to benzene (C₆H₆) at the low parts per billion (ppb) concentration range. A combination of iridium and tungsten trioxide was used to develop the sensing layer. High sensitivity to 10 ppb C₆H₆ was demonstrated during several repeated measurements at a constant temperature from 180 to 300 °C. The sensor performance were studied also as a function of the electrical operating point of the device, i.e., linear, onset of saturation, and saturation mode. Measurements performed in saturation mode gave a sensor response up to 52 % higher than those performed in linear mode.

Abstract: In this paper, we investigated the nitrogen oxides (NO, NO₂) detection capability of strontium titanate (SrTiO₃) when used as sensing layer on gas sensitive silicon carbide field effect transistors (SiC-FETs). Sensitivity, selectivity and response times for NO, NO₂, and NH₃ were characterized, to determine the possibility for diesel exhaust after treatment control applications. It was found that NO_x can be detected down to single digit ppm levels at sensor temperatures in the 550°C - 600°C range. In addition, the results indicate that it is possible to suppress sensitivity to ammonia by selecting an operating temperature around 530°C.

Abstract: Gas sensitive silicon carbide field effect transistors with nanostructured Ir gate layers have been used for the first time for sensitive detection of volatile organic compounds (VOCs) at part per billion level for indoor air quality applications. Formaldehyde, naphthalene, and benzene have been used as typical VOCs in dry air and under 10% and 20% relative humidity. A single VOC was used at a time to study long-term stability, repeatability, temperature dependence, effect of relative humidity, sensitivity, response and recovery times of the sensors.

Abstract: Epitaxially grown single layer graphene on silicon carbide (SiC) resistive sensors were characterised for NO2 response at room and elevated temperatures, with an n-p type transition observed with increasing NO2 concentrations for all sensors. The concentration of NO2 required to cause this transition varied with different graphene samples and is attributed to varying degrees of substrate induced Fermi-level pinning above the Dirac point. The work function of a single layer device demonstrated a steady increase in work function with increasing NO2 concentration indicating no change in reaction mechanism in the concentration range measured despite a change in sensor response direction. Epitaxially grown graphene device preparation is challenging due to poor adhesion of the graphene layer to the substrate. A field effect transistor (FET) device is presented which does not require wire bonding to contacts on graphene.