Papers by Author: Muneyasu Suzuki

Abstract: Effect of annealing temperature on the dielectric properties of Bi1.5Zn1.0Nb1.5O7 films prepared on (111)Pt//(001)Al2O3 and (111)Pt/fused silica substrates by MOCVD was investigated. The tunability and the inverse of the dielectric loss [1/ (tan )] increased with increasing annealing temperature. Relative dielectric constant and temperature coefficient of the capacitance (TCC) increased with the crystallinity of the films. On the other hand, (1/tan ) was independent of the crystallinity of the films, but was dramatically increased by the annealing.

Abstract: (001)-, (1110), and (105)- oriented SrBi4Ti4O15 films with its c-axis tilted 0, 45 and 55o from the surface normal were epitaxially grown by metal organic chemical vapor deposition and the temperature dependency of the dielectric constant was systematically investigated. Relative dielectric constant, εr, and its temperature dependency increased when the tilting angle of the c-axis from the substrate surface normal increased. Temperature dependency of εr was positive in case of the (105) and (1110) orientation, which is in good agreement with the conventional ferroelectric materials. On the other hand, it became negative for (001) orientation. This shows the orientation dependency of εr in SrBi4Ti4O15.