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Articles by author: P.G. Baranov

• Acceptor Impurities in Silicion Carbide: Electron Paramagnetic Resonance and Optically Detected Magnetic Resonance Studies
  Published in: Defect and Diffusion Forum Vols. 148-149 (p129)
• Acceptors in Silicon Carbide: ODMR Data
  Published in: Defects in Semiconductors 16 (p1207)
• Deep-Level Defects in AlN Single Crystals: EPR Studies
  Published in: Silicon Carbide and Related Materials 2009 (p1195)
• Electron Paramagnetic Resonance of Erbium in Bulk Silicon Carbide Crystals
  Published in: Defects in Semiconductors 19 (p1539)
• Electron Paramagnetic Resonance of Erbium in Bulk Silicon Carbide Crystals
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p607)
• Electronic Structure of Acceptors in Silicon Carbide
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p581)
• EPR of Deep Al and Deep B in Heavily Al-doped as Grown 4H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p521)
• Evidence of the Ground Triplet State of Silicon-Carbon Divacancies (P6, P7 Centers) in 6H SiC: An EPR Study
  Published in: Silicon Carbide and Related Materials 2005 (p535)
• High-Frequency EPR Studies of Shallow and Deep Boron Acceptors in 6H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p587)
• High-Frequency EPR Studies of Shallow and Deep Boron Acceptors in 6H-SiC
  Published in: Defects in Semiconductors 19 (p703)
• High-Temperature Stable Multi-Defect Clusters in Neutron Irradiated Silicon Carbide: Electron Paramagnetic Resonance Study
  Published in: Silicon Carbide and Related Materials 2004 (p489)
• Identification of Iron and Nickel in 6H-SiC by Electron Paramagnetic Resonance
  Published in: Silicon Carbide and Related Materials 2000 (p529)
• Identification of Iron Transition Group Trace Impurities in GaN Bulk Crystals by Electron Paramagnetic Resonance
  Published in: Defects in Semiconductors 19 (p1167)
• Identification of the Triplet State N-V Defect in Neutron Irradiated Silicon Carbide by Electron Paramagnetic Resonance
  Published in: Silicon Carbide and Related Materials 2005 (p555)
• Intrinsic Defects in 6H-SiC Generated by Electron Irradiation at the Silicon Displacement Threshold
  Published in: Silicon Carbide and Related Materials 2000 (p509)