Papers by Author: Paula M. Vilarinho

Abstract: In an attempt to gain a better understanding of the lattice dynamics in lanthanum doped SrTiO3 (STO) ceramics, with general formulae LaxSr(1-1.5x)TiO3, we have carried out a detailed Raman study of the x=0.0133 ceramic in the temperatures ranging from 10K to room temperature. Our results show that lanthanum substitution gives rise to new features in the Raman spectra. The Rayleigh band and the extra Raman-forbidden infrared active modes observed provide evidence for the existence of disorder in the system, apparently associated with grain structure, and lattice defects. Moreover, the absence of a TO1 polar soft mode supports the non-existence of a ferroelectric phase at low temperatures. The shift of the para-antiferrodistorsive transition temperature towards higher temperatures clearly evidences that the replacement of Strontium by Lanthanum occurs at the lattice A-site.

Abstract: Chain reorientation may be induced in polyvinylidene fluoride (PVDF) in its β-phase by applying a deformation perpendicular to the pre-oriented polymeric chains. This reorientation begins right after the yielding point and seems to be completed when the stress-strain curve stabilizes. As the deformation process plays an important role in the processing and optimisation properties of the material for practical applications, different deformation stress was applied to the PVDF lamellas and their topographic change and piezoelectric response were studied by means of scanning force microscopy in a piezo-response mode. The experimental results confirm the previously observed chain reorientation that occurs right after the yielding point and that is completed when the yielding region is passed. This reorientation is accompanied by a stretching of the granular structures observed in the topographical images and variations in the domain response. The observed results help to explain the variations in the macroscopic response of the material.

Abstract: Crystalline (Sr1-1.5xBix)TiO3 (SBiT) thin films (0.002 ≤ x ≤ 0.5) were prepared by sol-gel on Pt/TiO2/SiO2/Si substrates. Cubic monophasic SBiT films were obtained for samples with x ≤ 0.167. For films with x ≥ 0.267 a second phase identified as Bi4Ti3O12 was observed. The lattice parameter of SBiT films increases with increasing Bi content, similar to the variation observed in SBiT ceramics. No obviously variation of the grain size with the Bi content was observed. The dielectric constant ε´ at room temperature increases with increasing of Bi concentrations up to x ≤ 0.1. The loss tangent of Bi doped SrTiO3 films is approximately 0.05 and lower than undoped ST films at 10kHz. The higher values of ε´ of Bi doped ST films with x=0.1 and x=0.167 in comparison with undoped films may suppose the appearance of a dielectric anomaly at low temperatures, which will be dependent on the Bi content.

Abstract: The effect of the electric field on the dielectric response of the Sr1-xCaxTiO3 ceramic system was analysed and complemented by structural and microstructural studies. A monotonic decrease of the lattice parameter and an increase of the average grain size from 11 to 23 μm with increasing x were observed by X-ray diffraction and scanning electron microscopy analysis respectively. Samples with x = 0.003 and 0.01 reveal a monotonous increase of low-temperature dielectric constant, corresponding to an enhancement of the tunability and a reduction of the driving electric field at 10-30 K for x = 0.01. For Sr1-xCaxTiO3 ceramic samples with x = 0.04 and 0.10 the ferroelectric phase transition of around 20 K was observed together with the enhanced tunability of the dielectric constant at 30-85 K for x = 0.10.

Abstract: In the current work two different routes, an alkoxide based sol-gel and an aqueous solution-gel route, were used to synthesize PZT (30/70) powders. The phase purity, morphology and particle size of both were studied by XRD, TEM and particle size analysis. The dispersion behavior of the powders in water was investigated by means of light scattering particle size analyzer and zeta potential measurements. The extent to which powder morphology, synthesis route and particle charge state relate to the resulting dispersion behaviour was established. Alkoxide sol-gel derived powders are better dispersed in aqueous media than aqueous solution-gel derived powders.

Abstract: The thermoreactivity of a zinc acetate non-alkoxide solution used for the preparation of ZnO-based thin films was investigated in the temperature range 20-600°C by TG-DTA, XRD and SEM data. We found that the formation in air of ZnO crystallites from the sol-gel precursor occurs above 150°C simultaneously with the decomposition of an intermediary compound, most probably carbonate hydroxide (sclarite and/or hydrozincite). At 200 °C, the crystalline structure is well defined in terms of ZnO hexagonal lattice parameters, although residual organic compounds and water were not yet fully removed and an amorphous phase coexists. A kinetic investigation on the thermal decomposition of sol-gel precursor from DTA data using Kissinger differential equation is also presented. Apparent activation energy values of about. 100 kJ mol-1 corresponding to the nonisothermal decomposition of solid precursors in the temperature range 170-250oC have been found.

Abstract: In this work we studied the influence of the power density of hydrogen plasma on electrical and optical properties (Hall mobility, free carrier concentration, sheet resistance, optical transmittance and a.c. impedance) of indium zinc oxide films, aiming to determine their chemical stability. This is an important factor for the optimization of amorphous/nanocrystalline p-i-n hydrogenated silicon (a/nc-Si:H) solar cells, since they should remain chemically highly stable during the p layer deposition. To perform this work the transparent conductive oxide was exposed to hydrogen plasma at substrate temperature of 473 K, 87 Pa of pressure and 20 sccm of hydrogen flow. The results achieved show that IZO films were reduced for all plasma conditions used, which leads mainly to a decrease on films transmittance. For the lowest power density used in the first minute of plasma exposition the transmittance of the IZO films decreases about 29%.

Abstract: A series of amorphous silicon carbide films were prepared by plasma enhanced chemical vapor deposition technique on (100) silicon wafers by using methane, silane, and hydrogen as reactive resources. A very thin (around 15 Å) gold film was evaporated on the half area of the a- SiC:H films to investigate the metal induced crystallization effect. Then the a-SiC:H films were annealed at 1100 0C for 1 hour in the nitrogen atmosphere. Fourier transform infrared spectroscopy (FTIR), X-Ray diffraction (XRD), and scanning electron microscopy (SEM) were employed to analyze the microstructure, composition and surface morphology of the films. The influences of the high temperature annealing on the microstructure of a-SiC:H film and the metal induced metallization were investigated.