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Articles by author: Piere Ruterana

• Analysis of the Interfacial Relationship in GaN/(0001) AI₂O₃ Layers
  Published in: Intergranular and Interphase Boundaries in Materials (p111)
• Experimental and Theoretical Investigation of Dislocations in {10¯12} Twins in Zinc
  Published in: Intergranular and Interphase Boundaries in Materials (p113)
• Extended Crystallographic Defects in Gallium Nitride
  Published in: Advanced Electron Microscopy and Nanomaterials (p117)
• Finite Element Simulation of Residual Stresses in Epitaxial Layers
  Published in: Residual Stresses VI, ECRS6 (p141)
• Modified Stillinger-Weber Potential for Planar Defects Modeling in GaN
  Published in: Intergranular and Interphase Boundaries in Materials (p223)
• Planar Defects in Epitaxial GaAs Meeting in the Interfacial Region GaAs / (001)Si
  Published in: Intergranular and Interphase Boundaries in Materials (p285)
• The Atomic Structure of Prismatic Planar Defects in GaN/AlN Grown over Silicon Carbide and Sapphire Substrates
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1247)
• The Atomic Structure of Tilt Grain Boundaries in AIN/GaN Layers Grown on (0001) Sapphire: A Case Study, the Σ31 (11-4-70) Symmetric Grain Boundary
  Published in: Intergranular and Interphase Boundaries in Materials (p243)
• The Structure of Threading Dislocations Generated at the GaN/Al₂O₃ Interface
  Published in: Intergranular and Interphase Boundaries in Materials (p349)