Papers by Author: R. Verucchi

Abstract: We describe a procedure for the optimization of a 3C-SiC buffer layer for the deposition of 3C-SiC on (001) Si substrates. A 100 – 150 nm thick SiC buffer was deposited after a standard carbonization at 1125 °C, while increasing the temperature from 1125 °C to 1380 °C. Ramp time influenced the quality and the crystallinity of the buffer layer and the presence of voids at the SiC/Si interface. After the optimization of the buffer, to demonstrate its effectiveness, a high-quality 3C-SiC was grown, with excellent surface morphology, crystallinity and low stress.

Abstract: In this work we report the enhancement of the 3C-SiC band edge luminescence induced by the SiO2 shell in SiC/SiO2 core/shell nanowires (NWs) system. We demonstrate that the shell enhances the SiC near band edge luminescence and we argue the formation of a type-I quantum well between the SiC core and the SiO2 shell, with the consequent injection of carriers from the larger band-gap shell to the narrower band-gap core.