Papers by Author: S.N. Varnakov

Abstract: Pronounced optical-and bias-current-sensitive features of the transport properties of a Fe/SiO₂/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO₂/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the MIS transition with a Schottky barrier near the interface between SiO₂ and p-Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and optical radiation. The mechanism of the optical effect is photogeneration of electron-hole pairs in the semiconductor substrate near its boundary with SiO₂ layer.

Abstract: Determination of stable phases formed at the Fe/Si interface in (Fe/Si)n structure, grown by thermal evaporation in an ultrahigh vacuum system was performed using conversion electron Mössbauer spectroscopy (CEMS).