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Papers by Author: Saburou Shimizu

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Distribution of Secondary Defects and Electrical Activation after Annealing of Al-Implanted SiC

Authors: Yukihiro Furukawa, Hideo Suzuki, Saburou Shimizu, Naoyuki Ohse, Masahide Watanabe, Kenji Fukuda

Abstract: We investigated the relationship between secondary defects and electrical characteristics in the activation annealing (1600 °C-1800 °C) of 4H-SiC after Al implantation (3 × 10¹⁷ cm^-³-3 × 10¹⁹ cm^-³). X-ray topography revealed that the dislocation density did not increase after implantation and annealing. Scanning transmission electron microscopy (STEM) images revealed black spots that aggregate with increase in Al dose. The results of energy dispersive X-ray spectroscopy analysis suggested that these black spots are due to the strain of secondary defects. The I-V characteristics at reverse bias of a pin diode fabricated with Al implantation show that secondary defects shown as black spots in the STEM images do not affect the electrical characteristics under the implantation and annealing conditions used in this experiment.

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High Temperature Ion Implantation and Activation Annealing Technologies for Mass Production of SiC Power Devices

Authors: Kazuo Tezuka, Tatsurou Tsuyuki, Saburou Shimizu, Shinichi Nakamata, Takashi Tsuji, Noriyuki Iwamuro, Shinsuke Harada, Kenji Fukuda, Hiroshi Kimura

Abstract: In this paper, we demonstrate the fabrication of SBD utilizing SiC process line specially designed for mass production of SiC power device. In SiC power device process, ion implantation and activation annealing are key technologies. Details of ion implantation system and activation annealing system designed for SiC power device production are shown. Further, device characteristics of SBD fabricated using this production line is also shown briefly.

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High Performance SiC IEMOSFET/SBD Module

Authors: Shinsuke Harada, Yasuyuki Hoshi, Yuichi Harada, Takashi Tsuji, Akimasa Kinoshita, Mitsuo Okamoto, Youichi Makifuchi, Yasuyuki Kawada, Kouji Imamura, Masahide Gotoh, Takeshi Tawara, Shinichi Nakamata, T. Sakai, Fumikazu Imai, Naoyuki Ohse, Mina Ryo, Atsushi Tanaka, Kazuo Tezuka, Tatsurou Tsuyuki, Saburou Shimizu, Noriyuki Iwamuro, Yoshiyuki Sakai, Hiroshi Kimura, Kenji Fukuda, Hajime Okumura

Abstract: SiC power module with low loss and high reliability was developed by utilizing IEMOSFET and SBD. The IEMOSFET is the SiC MOSFET with high channel mobility in which the channel region is the p-type carbon-face epitaxial layer with low acceptor concentration. Elemental technologies for the high channel mobility and the high reliability of the gate oxide have been developed to realize the excellent characteristics by the IEMOSFET. The SBD was designed so as to minimize the forward voltage drops and the reverse leakage current. For the fabrication of these SiC power devices, the mass production technology such as gate oxidation, ion implantation and following activation annealing have been also developed.

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