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Articles by author: Satoshi Tanimoto

• 4H-SiC ACCUFET with a Two-Layer Stacked Gate Oxide
  Published in: Silicon Carbide and Related Materials 2001 (p1073)
• Breakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping Substrates
  Published in: Silicon Carbide and Related Materials - 2002 (p435)
• Critical Reliability Issues for SiC Power MOSFETs Operated at High Temperature
  Published in: Silicon Carbide and Related Materials 2006 (p779)
• Electrical Characteristics of Al⁺ Ion-Implanted 4H-SiC
  Published in: Silicon Carbide and Related Materials 2001 (p803)
• Electromigration Reliability of the Contact Hole in SiC Power Devices Operated at Higher Junction Temperatures
  Published in: Silicon Carbide and Related Materials 2009 (p1139)
• Fabrication of 4H-SiC Planar MESFETs Having Low Contact Resistance
  Published in: Silicon Carbide and Related Materials 2001 (p1383)
• Forced-Air-Cooled 10 kW Three-Phase SiC Inverter with Output Power Density of More than 20 kW/L
  Published in: Silicon Carbide and Related Materials 2010 (p738)
• Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process
  Published in: Silicon Carbide and Related Materials - 2002 (p725)
• High-Reliability ONO Gate Dielectric for Power MOSFETs
  Published in: Silicon Carbide and Related Materials 2004 (p677)
• High-Temperature Reliable Ni₂Si-Based Contacts on SiC Connected to Si-Doped Al Interconnect via Ta/TaN Barrier
  Published in: Silicon Carbide and Related Materials 2008 (p561)
• Impact of Dislocations on Gate Oxide in SiC MOS Devices and High Reliability ONO Dielectrics
  Published in: Silicon Carbide and Related Materials 2005 (p955)
• Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS)
  Published in: Silicon Carbide and Related Materials 2001 (p847)
• Negative Field Reliability of ONO Gate Dielectric on 4H-SiC
  Published in: Silicon Carbide and Related Materials 2007 (p795)
• New High-Voltage Unipolar Mode p⁺ Si/n^– 4H-SiC Heterojunction Diode
  Published in: Silicon Carbide and Related Materials 2004 (p953)
• Novel Power Si/4H-SiC Heterojunction Tunneling Transistor (HETT)
  Published in: Silicon Carbide and Related Materials 2005 (p1453)