Papers by Author: Su Cheol Gong

Abstract: Polymer light emitting diodes (PLEDs) with ITO/PEDOT:PSS/PVK/PFO-poss/LiF/Al structure were prepared by spin coating method on the plasma-treated ITO(indium tin oxide)/glass substrates. PVK(N-vinylcabozole) and PEDOT:PSS [poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)] polymers were used as hole injection and transport materials. As blue light emitting material, PFO-poss(poly(9,9-dioctylfluorence) polymer was used. The dependence of the plasma treatment of ITO films on the optical and electrical properties of the PLEDs was investigated. The sheet resistance of ITO films increased slightly with increasing the plasma intensity from 20W to 300W in RF power. In contrast, the surface roughness was improved as the plasma intensity increased. The maximum current density and luminance were about 20 mA/cm2 and 250 cd/m2 at 9 V for the PLED sample coated on ITO/glass substrate with plasma treatment of 100W for 30s under 40 mtorr O2 pressure. The maximum emission spectrum of the PLEDs was 441 nm showing blue color.

Abstract: The organic-inorganic field effect transistors (OIFETs) with ZnS active layer were fabricated on the ITO/glass substrate using cross-linked PVP (poly-4-vinylphenol) as a gate insulator. ZnS semiconductor films were prepared by the atomic layer deposition method. In the case of cross-linked PVP film, the leakage current and capacitance were about 1× 10-8 A and 12 nF/cm2, showing good gate insulation property. The carrier concentration and mobility of ZnS film deposited on SiO2/Si wafer was found to be -9.4×1015 cm-3 and 49.0 cm2/ V·sec, respectively. For the OIFET devices with ITO/PVP/ZnS/Ti:Au structure, the carrier mobility was about 1.9 cm2/V·sec. From the AFM images, lower mobility in the OIFET device compared with ZnS film on SiO2/Si substrate may be attributed to a rough surface morphology of ZnS film.

Abstract: Polymer light emitting diodes (PLEDs) with ITO/PEDOT:PSS/MEH-PPV/LiF/Al structures were prepared by spin coating method on the patterned ITO(indium tin oxide)/glass substrates. MEH-PPV [Poly(2-methoxy-5(2-ethylhexoxy)-1,4-phenylenevinyle)] and PEDOT:PSS [poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)]
polymers were used as the light emitting and hole transport materials. The dependence of the plasma treatment of ITO anode films on the optical and electrical properties of the PLEDs was investigated. The sheet resistances increased with increasing the plasma intensities from 40W to 300W in RF power. In contrast, the surface roughness was improved as the plasma intensity increased. The maximum current density and luminance were found to be about 97.5 mA/
and 55 cd/m2 at 8 V for the PLED sample coated on ITO/glass substrate with plasma treatment of 100W for 30s under 40 mtorr O2 pressure.