Papers by Author: Sung Pill Nam

Abstract: The V1.9W0.1O5 thin films deposited on Pt/Ti/SiO2/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the V1.9W0.1O5 thin films annealed at 300°C were 37.7, with a dielectric loss of 2.535, respectively. Also, the TCR values of the V1.9W0.1O5 thin films annealed at 300°C were about -3.7%/K.

Abstract: The BaTiO3/SrTiO3 heterolayered thick films were fabricated by two different methods – thick films of BaTiO3 by screen printing method on alumina substrates electrodes with Pt, thin films of SrTiO3 by the spin-coating method on BaTiO3 thick films and once more thick films of BaTiO3 by the screen printing method on SrTiO3 layer. The leakage current and the dielectric properties were investigated for effect of various stacking sequence of sol-gel-prepared SrTiO3 layer at interface of BaTiO3 thick films. The insertion of SrTiO3 interlayer yielded BaTiO3 thick films with homogeneous and dense grain structure with the number of SrTiO3 layers. The leakage current density of the BaTiO3/SrTiO3-7 film is less that 1.5
10-9 A/cm2 at 5 V.

Abstract: Ferroelectric PZT(70/30) thick films were fabricated by the hybrid technique adding the sol coating process to the screen-printing process to obtain a good densification. Structural and electrical properties of the thick films with the sol concentration were investigated. The relative dielectric constant increased and dielectric loss decreased with increasing the sol concentration, the values of the thick film coated with sol concentration of 1.5 M were 698 and 2.5 % at 1 kHz, respectively. And the remanent polarization and dielectric breakdown strength of the thick film coated with sol concentration of 1.5 M were about 38 μC/cm2 and 200 kV/cm, respectively. The leakage current densities were less than 10-8 A/cm2 at the applied electric field range of 0-100 kV/cm in all thick films.