Papers by Author: T. Sakai

Abstract: SiC power module with low loss and high reliability was developed by utilizing IEMOSFET and SBD. The IEMOSFET is the SiC MOSFET with high channel mobility in which the channel region is the p-type carbon-face epitaxial layer with low acceptor concentration. Elemental technologies for the high channel mobility and the high reliability of the gate oxide have been developed to realize the excellent characteristics by the IEMOSFET. The SBD was designed so as to minimize the forward voltage drops and the reverse leakage current. For the fabrication of these SiC power devices, the mass production technology such as gate oxidation, ion implantation and following activation annealing have been also developed.

Abstract: Epoxy-organoclay nanocomposite were prepared and investigated in terms of mechanical properties and also in term of water diffusion and sulfuric acid corrosion resistance. Diffusion was studied through epoxy samples containing up to 6phr of organically treated montmorillonite. The diffusion of the environmental solution was measured by immersion of the samples in these solutions at elevated temperature with noting the increase in weight as immersion function of time. An evaluation by flexural strength of the nanoclay/epoxy composites samples was made to compare their mechanical performances under corrosive environment as a function of immersion time and temperature.