Papers by Author: Tae Gon Kim

Abstract: A non-destructive metrology technique for critical dimension of Fin structure is important for better device characterization and development for improving yield. Due to extremely small dimension with high complexity in FinFET a new metrology solution needs to be evaluated. In-line atomic resolution profiler was performed to provide a suitable metrology for oxide recess metrology in Fin process. The technique could measure accurately the height and CD of Fin structures, which has the space with of 25 nm and the height of 60 nm. The uniformity of recess height could be measured, which could be interpreted by loading effect of etch process. High long term repeatability of the technique was achieved for process monitoring purpose.

Abstract: Atomic force microscope (AFM) with inclined sample measurement and hydrophobic functionalized AFM probe was used to visualize the sidewall of low-k pattern and allowed to characterize the hydrophobic characteristics on the sidewall after low-k etch. To functionalized the AFM probe, 1H,1H,2H,2H-Perfluorodecyltrichlorosilane (FDTS) as a hydrophobic film was coated on an AFM probe. Because of the magnitude of the phobic-phobic interaction force and the tip forced to make a phase shift. Using this technique the visualization and characterization of the etch residue on the low-k sidewall can be successfully performed. It is shown that the investigation toward an effective chemical clean for the etch residue removal could be applicable.

Abstract: Four different types of FINs; amorphous Si (a-Si), annealed a-Si, polycrystalline Si (poly-Si) and crystalline Si (c-Si) were used to investigate the effect of interfacial strength and the length of structures on the physical cleaning window by measuring their collapse forces by atomic force microscope (AFM). A transmission electron microscope (TEM) and a nanoneedle with a nanomanipulator in a scanning electron microscope (SEM) were employed in order to explain the different collapse behavior and their forces. Different fracture shapes and collapse forces of FINs could explain the influence of the interfacial strength on the pattern strength. Furthermore, the different lengths of a-Si FINs were prepared and their collapse forces were measured and the shorter length reduced their pattern strength. Strong adhesion at the interface resulted in a wider process window while smaller dimensions made the process window narrower.