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Articles by author: Th. Wichert

• Annealing of Damage in GaAs and InP after Implantation of Cd and In
  Published in: Defects in Semiconductors 16 (p1481)
• Atomic Defect Configurations Identified by Nuclear Techniques
  Published in: Defects in Semiconductors 16 (p1081)
• Comparative Study of Vacancy Clustering in Al and Cu Using PAC, Channeling and Positron Annihilation
  Published in: Vacancies and Interstitials in Metals and Alloys (p829)
• Defect Structures in Heavily In-Doped II-VI Semiconductors
  Published in: Defects in Semiconductors 19 (p1341)
• Doping and Characterisation of Nanocrystalline Materials
  Published in: Doped Nanopowders (p61)
• Doping of ZnSe, ZnTe, and CdTe with Group V Elements
  Published in: Defects in Semiconductors 18 (p309)
• Intrinsic Defects in ZnSe, ZnTe, and CdS Doped with Li
  Published in: Defects in Semiconductors 18 (p321)
• Investigation of Grain Growth and Stabilisation of Nanocrystalline Ni
  Published in: Metastable, Mechanically Alloyed and Nanocrystalline Materials 2000 (p247)
• Magnetic Properties of Grain Boundaries and Precipitates in Nanocrystalline Ni and Ni-Cu Alloys
  Published in: Metastable, Mechanically Alloyed and Nanocrystalline Materials 1999 (p847)
• Metal Vacancies in Li and In Doped ZnSe and CdS
  Published in: Defects in Semiconductors 17 (p391)
• Metal Vacancies in Li and In Doped ZnSe and CdS
  Published in: Defects in Semiconductors 17 (p459)
• On the Formation of ¹¹¹In-Donor Atom Pairs in Silicon as Observed by PAC
  Published in: Defects in Semiconductors 14 (p551)
• On the Formation of Unusual Diffusion Profiles in Cd_xZn_1-xTe Crystals after Implantation of Different Elements
  Published in: Diffusion in Materials - DIMAT2008 (p587)
• On the Pairing between Indium and Carbon Atoms in Silicon
  Published in: Defects in Semiconductors 17 (p1251)
• PAC Study of the Acceptor Li in II-VI Semiconductors
  Published in: Defects in Semiconductors 16 (p1259)