Papers by Author: Th. Wichert

Abstract: It is known that the diffusion of Ag and Cu in Cd1 xZnxTe crystals exhibits unusual concentration profiles depending strongly on the external vapor pressure of Cd during diffusion. Recent experiments show that the dopant Na forms qualitatively the same diffusion profiles including the phenomenon of uphill diffusion. Also the transition elements Ni and Co show a strong dependence of the diffusion behavior on the external Cd pressure, but the shapes of the concentration profiles differ significantly from those known for Ag and Cu. The different behavior of Ag, Cu, and Na, on the one hand, and Ni and Co, on the other hand, are proposed to be connected to the respective charge states of the dopants at interstitial positions in Cd1 xZnxTe. For the dopants K and Au, unusual diffusion properties have not been observed. The respective diffusion coefficients are DK = 1.2(2)•10 10 cm2/s (750 K) and DAu = 8(2)•10 8 cm2/s (800 K).

Abstract: The synthesis behaviour and characterisation of nanocrystalline materials is presented. The materials synthesised are ZnO and InP doped with shallow donors and acceptors, respectively. Characterisation was performed with radioactive isotopes using the perturbed γγ angular correlation technique (PAC), thereby yielding local information on an atomic scale. The characterisation was supplemented by X-ray diffraction, transmission electron microscopy, UV/VIS absorption spectroscopy, photoluminescence spectroscopy, and extended X-ray absorption fine structure spectroscopy. It was shown that the successful incorporation of dopants in nanocrystalline ZnO and InP requires annealing at temperatures at which the growth of the nanocrystals in the sample becomes a significant process.

Abstract: Ag and Cu diffused into CdTe exhibit unusual shapes of their concentration profiles, especially if the diffusion was performed under Cd vapor pressure. The shapes of the concentration profiles at low concentrations of Ag or Cu are well described by a model based on the interaction with intrinsic defects. In that model the characteristic features of the profiles can be independently reproduced by appropriate parameters. It turns out that the resulting profiles are determined by the diffusion of interstitial Cd atoms and reflect the actual distribution of the intrinsic defects in the crystal, i.e. the deviation from stoichiometry.