Papers by Author: Tian Bao Chen

Abstract: N-type Bi2Te3 and p-type Sb2Te3 thermoelectric thin films have been prepared by RF and DC co-sputtering. The Seebeck coefficient of n-type Bi2Te3 and p-type Sb2Te3 thin films is about -122 μVK-1 and 108 μVK-1, the power factor is about 0.82×10-3 Wm-1K-2 and 1.60×10-3 Wm-1K-2. Then, the films have been selected to fabricate the thin film thermoelectric generator. The results show that the open-circuit voltage of 12.2 mV and the output power of 3.32 μW are obtained for a thin film generator with the temperature difference at 60 K.

Abstract: Antimony (Sb) and zinc (Zn) bilayer was sputter-deposited at room temperature with various Zn contents by ion-beam sputtering and transformed into Antimony zinc after post thermal annealed at 573K for 60 min. A power factor of 6.18×10-4 W/mK2 at 473 K has been obtained when the sputtering time of the Zn was 20 minutes. The maximum Seebeck coefficient is 42.0 μVK-1. Composition analysis shows that the compound of SbZn is achieved and the small Seebeck coefficient is due to the deviation of stoichiometric.

Abstract: ZnO thin films were deposited by DC reactive magnetron sputtering, and the samples were annealed from 100°C to 400°C, respectively. With the help of x-ray diffractmeter (XRD), spectrophotometer, and photoluminescence (PL) spectroscopy system, the microstructure, intrinsic stress, optical properties, and PL properties were investigated, respectively. The XRD results reveal that all the ZnO films are found to have the hexagonal wurtzite structure with prominent (002) peak. With the annealing temperature increasing, the grain size increased accordingly. All the samples exhibit compressive stress, and the stress value decreasing with annealing temperature increasing. Optical transmittance spectra investigated that all the samples have high transmittance in visible range. With annealing temperature increasing, peak transmittance rising of the sample were observed. The fundamental absorption edge, which associated with band gap of materials, shifting to longer wavelength is observed too. PL results shows that the sample annealed with 300°C have higher intensity emission peak.