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Articles by author: Vladimir P. Markevich

• Calibration Factor for Determination of Interstitial Oxygen Concentration in Germanium by Infrared Absorption
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p735)
• Divacancy-Oxygen and Trivacancy-Oxygen Complexes in Silicon: Local Vibrational Mode Studies
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p129)
• Electronic Properties and Structure of a Complex Incorporating a Self-Interstitial and two Oxygen Atoms in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p273)
• Electronic Properties and Thermal Stability of Defects Induced by MeV Electron/Ion Irradiations in Unstrained Germanium and SiGe Alloys
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p253)
• Formation of Hydrogen-Related Shallow Donors in Ge_1-xSi_x Crystals Implanted with Protons
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p131)
• Formation of Radiation-Induced Defects in Si Crystals Irradiated with Electrons at Elevated Temperatures
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p299)
• Interstitial Carbon Related Defects in Low-Temperature Irradiated Si: FTIR and DLTS Studies
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p261)
• Metastable VO₂ Complexes in Silicon: Experimental and Theoretical Modeling Studies
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p223)
• Photovoltaic Power Generation: The Impact of Nano-Materials
  Published in: Advances in Electronic Materials (p181)
• Radiation-Induced Defect Reactions in Cz-Si Crystals Contaminated with Cu
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p363)
• Radiation-Induced Defect Reactions in Tin-Doped Ge Crystals
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIV (p392)
• Stable Hydrogen Pair Trapped at Carbon Impurities in Silicon
  Published in: Defects and Diffusion in Semiconductors (p1)
• Vacancy Clusters in Germanium
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p125)
• VO_n (n≥3) Defects in Irradiated and Heat-Treated Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p267)