Papers by Author: Y.H. Ding

Abstract: Nano-scale spatial wavelength engineering of quantum nanostructures using nitrogen ion-implantation induced intermixing has been developed for tuning the bandgap of quantum-well, quantum-dash-in-well, and quantum-dot nanostructures. High performance bandgap-tuned quantum-well and quantum-dash lasers fabricated using this technique has been demonstrated.

Abstract: We investigate the influence of sputtered silica as annealing cap on the enhancement of intermixing rate of semiconductor quantum nanostructures. After sputtered silica application and subsequent rapid thermal annealing, we observed bandgap shift of over 200 meV with respect to the bandgap of as-grown material from various GaAs-based quantum well (QW) heterostructures such as GaAs/AlGaAs, InAlGaP/GaAs, and GaAs/AlGaAs systems at significantly lower temperature than the conventional dielectric cap process with plasma enhanced chemical vapor deposition (PECVD). The results suggest that the sputtered silica process is a promising intermixing technique for the monolithic integration of multiple active/passive photonic components on GaAs-based material systems.