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Articles by author: Yaroslav Koshka

• 4H-SiC PiN Diodes Fabricated Using Low-Temperature Halo-Carbon Epitaxial Growth Method
  Published in: Silicon Carbide and Related Materials 2009 (p925)
• Aluminum Doping by Low-Temperature Homoepitaxial Growth for Ni Ohmic Contacts to p-Type 4H-SiC
  Published in: Silicon Carbide and Related Materials 2008 (p581)
• Assessment of "Normally On" and "Quasi On" SiC VJFET's in Half-Bridge Circuits
  Published in: Silicon Carbide and Related Materials 2003 (p1153)
• Computational Modeling for the Development of CVD SiC Epitaxial Growth Processes
  Published in: Silicon Carbide and Related Materials - 2002 (p177)
• Correlation between Room Temperature Photoluminescence and Resistivity in Semiinsulating Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2005 (p717)
• Depth Distribution of Lattice Damage-Related D_I and D_II Defects after Ion Implantation and Annealing of 6H-SiC
  Published in: Silicon Carbide and Related Materials 2001 (p513)
• Dislocations and Triangular Defect in Low-Temperature Halo-Carbon Epitaxial Growth and Selective Epitaxial Growth
  Published in: Silicon Carbide and Related Materials 2008 (p121)
• Effect of High-Dose Aluminium Implantation on 4H-SiC Oxidation
  Published in: Silicon Carbide and Related Materials 2003 (p885)
• Electrical and Optical Properties of High-Purity Epilayers Grown by the Low-Temperature Chloro-Carbon Growth Method
  Published in: Silicon Carbide and Related Materials 2011 (p129)
• Electrical Characterization of Defects in p-Type SiC Using Recombination Induced Conductivity Inversion
  Published in: Silicon Carbide and Related Materials 2004 (p551)
• Epitaxial Growth of 4H-SiC with High Growth Rate Using CH₃Cl and SiCl₄ Chlorinated Growth Precursors
  Published in: Silicon Carbide and Related Materials 2009 (p103)
• Experimental Investigation and Simulation of Silicon Droplets Formation during SiC CVD Epitaxial Growth
  Published in: Silicon Carbide and Related Materials 2004 (p105)
• Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs
  Published in: Silicon Carbide and Related Materials 2004 (p885)
• Growth of SiC Nanowires on Different Planes of 4H-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2011 (p1279)
• High Growth Rate (up to 20 µm/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor
  Published in: Silicon Carbide and Related Materials 2004 (p77)