Papers by Author: Yoshiaki Toyota

Paper TitlePage

A Highly Efficient 3.3-kV SiC-Si Hybrid Power Module with a Novel SiC JBS Diode and a Si Advanced Trench HiGT
Authors: Renichi Yamada, Norifumi Kameshiro, Yoshiaki Toyota, Takashi Hirao, Kan Yasui, Hidekatsu Onose, Kazuhiro Mochizuki, Hiroshi Miki, Natsuki Yokoyama, Hiroyuki Okino, Hiroyuki Matsuhima, Tetsuo Oda, Jiro Hasegawa, Mutsuhiro Mori
Abstract: A 3.3-kV SiC-Si hybrid module, composed of a low-forward-voltage (VF) SiC junction-barrier-Schottky (JBS) diode and a low-saturation-voltage VCE(sat) Si trench IGBT was fabricated and demonstrated highly efficient operation.
1091
Observation and Analysis of a Non-Uniform Avalanche Phenomenon in 4H-SiC 4°-Off (0001) p-n Diodes Terminated with a Floating-Field Ring
Authors: Kazuhiro Mochizuki, Hiroyuki Okino, Hiroyuki Matsushima, Yoshiaki Toyota
Abstract: 4H-SiC (0001) p-n diodes terminated with a floating-field ring were found to emit light at breakdown in the opposite direction to that of substrate misorientation when the diodes were fabricated by aluminum implantation and dry-oxidation passivation. Two-dimensional simulation revealed that such non-uniform breakdown was mainly attributable to the asymmetric lateral straggling of implanted aluminum acceptors, rather than the anisotropic nature of the impact ionization coefficient.
640
Poly-Si Thin-Film Transistors Robust Against Hot-Carrier Stress and Application to Liquid Crystal Displays Fabricated by a 450°C Process
Authors: Takeo Shiba, Mutsuko Hatano, Mieko Matsumura, Yoshiaki Toyota, Yoshiharu Tai, Makoto Ohkura, Toshio Miyazawa, Toshihiko Itoga
19
Showing 1 to 3 of 3 Paper Titles