Papers by Author: Yun Gang Yuan

Abstract: The adhesion between diamond grits and the bond strongly influence the properties of diamond tools. Since diamond is covalent crystal, the high interfacial energy leads to the poor interface bonding between diamond grits and the bond. Furthermore, the sintering temperature of traditional vitrified bond is also very high because of the high refractoriness of alkalis containing in the bond, resulting in serious thermal damage to diamond grits. In this paper, a low melting point and high strength vitrified bond has been prepared mainly from borate glass, clay and lead glass. The bond is completely glassy above 850°C and the bending strength of the bond sintered at 850°C for 7 minutes is 125.7MPa with a 6.5:3.5 corundum/bond ratio. Moreover, this bond possesses good wettability with diamond abrasive from 600°C to 850°C.

Abstract: Nanocrystalline diamond compact possesses not only the advantageous performance of polycrystalline diamond but also the high strength and the high toughness of nano-ceramics. However, single-phase nanocrystalline diamond compact is very difficult to sinter because of a huge amount of oxygen-containing and nitrogen-containing functional groups absorbed on the surface of nanocrystalline diamond. In this paper, atomic layer deposition (ALD) method has been used to coat nanocrystalline diamond with titanium, which will promote the bonding of nanocrystalline diamond as the bond in polycrystalline diamond. In vacuum, the H2 and TiCl4 reactants were employed alternately in an ABAB… binary reaction sequence to achieve Ti layer, which reacted with diamond matrix and formed TiC in the coating, realizing strong chemical bonding between the coating and the diamond. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were utilized to study the structure and the morphology of the coating. The results confirmed the formation of titanium carbide at the depositing temperature 500°C. The darker spots and strips observed on nanocrystalline diamond particles by TEM were proved to be TiC and the nucleation and subsequent growth of TiC preferentially occurred in the defects as twin zones and dislocation areas on diamond surfaces.