Papers by Keyword: ACCUFET

Abstract: This paper compares the static and dynamic performance of 1.2 kV 4H-SiC ACCUFETs and INVFETs with identical channel length (0.5 μm) and gate oxide thickness (55 nm). It is demonstrated for the first time that ACCUFETs have lower total switching losses in comparison to the INVFETs. ACCUFETs are therefore superior devices for applications due to their lower specific on-resistance and overall switching losses. However, short circuit tests conducted on the devices show that ACCUFETs have a smaller short-circuit time (t_SC) in comparison the INVFETs due to their higher short-circuit current.

Abstract: This paper presents design, fabrication, and electrical performance of 8A, 1400V 4H-SiC ACCUFETs. It is intended to provide detail discussions on channel design, edge termination technique, and electrical characteristics of high current, 1.2kV rated 4H-SiC ACCUFETs.