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Articles by keyword: «Admittance Spectroscopy»

• Admittance Spectroscopy of Y₂O₃-Doped ZnO Varistors Sintered at Different Temperature
  Published in: High-Performance Ceramics VI (p382)
• Air-Annealing Effects on Polycrystalline Cu(In,Ga)Se₂ Heterojunctions
  Published in: Polycrystalline Semiconductors V (p409)
• An Experimental Study of Ion Beam and ECR Hydrogenation of Self-Ion Implantation Damage in Silicon by Admittance Spectroscopy and X-Ray Triple Crystal Diffractometry
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p483)
• Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses
  Published in: Silicon Carbide and Related Materials 2008 (p671)
• Electrical and Optical Characterization of SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p365)
• Electrical Characterisation of Defects in Polycrystalline B-Doped Diamond Films
  Published in: Silicon Carbide and Related Materials 2011 (p1315)
• Electrical Characterization of Defects in p-Type SiC Using Recombination Induced Conductivity Inversion
  Published in: Silicon Carbide and Related Materials 2004 (p551)
• Electrical Characterization of the Gallium Acceptor in 4H- and 6H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p557)
• Electrical Properties of Low Temperature Grown GaAs
  Published in: Defects in Semiconductors 19 (p929)
• Electrically Active Traps at the 4H-SiC/SiO₂ Interface Responsible for the Limitation of the Channel Mobility
  Published in: Silicon Carbide and Related Materials - 1999 (p1065)
• Electronic Properties of Thermally Oxidized Single-Domain 3C-SiC/6H-SiC Grown by Vapour-Liquid-Solid Mechanism
  Published in: Silicon Carbide and Related Materials 2006 (p505)
• Ground States of the Ionized Isoelectronic Ti Acceptor in SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p537)
• Impurity Conduction in Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2006 (p367)
• Majority Traps Observed in H⁺- or He⁺-Implanted Al-Doped 6H-SiC by Admittance and Deep Level Transient Spectroscopy
  Published in: Silicon Carbide and Related Materials - 2002 (p379)
• Oxygen-Related Defect Centers in 4H Silicon Carbide
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p553)