Keyword: "Barrier Height"
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A C-V Method of Slow-Switching Interface Traps Identification in Silicon Carbide MOS Structures

Authors: Tomasz Gutt, Henryk M. Przewłocki, Mietek Bakowski

523

A Model for a Barrier ZnO Varistors

Authors: A. Chaouch, Tioursi Mustapha

1329

Characterization of Schottky Contact on p-type 6H-SiC

Authors: Kiichi Kamimura, Shinsuke Okada, Hitoshi Ito, Masato Nakao, Yoshiharu Onuma

1227

Current-Voltage and Capacitance-Voltage Characteristics of Pd Schottky Diodes Fabricated on ZnO Grown along Zn- and O-Faces

Authors: M. Faisal, M. Asghar, K. Mahmood, M. Willander, O. Nur, P. Klason

270

Effect of Temperature Treatment on Au/Pd Schottky Contacts to 4H-SiC

Authors: Liliana Kassamakova, Roumen Kakanakov, Rositza Yakimova, A. Kakanakova-Georgieva, Mikael Syväjärvi, L. Wilzén, Erik Janzén

929

Effects of Thermal Annealing on Cu/6H-SiC Schottky Properties

Authors: Tomoaki Hatayama, Takashi Suezaki, Kazuaki Kawahito, Yukiharu Uraoka, Takashi Fuyuki

615

Electrical Characterization of Chemical Sensors Based on Catalytic Metal Gate - Silicon Carbide Schottky Diodes

Authors: Peter Tobias, Shinji Nakagomi, A. Baranzahi, R. Zhu, Ingemar Lundström, P. Mårtensson, Anita Lloyd Spetz

1097

Electrical Characterization of Electron Beam Induced Defects in Epitaxially Grown Si1-xGex

Authors: M. Mamor, F. Danie Auret, S.A. Goodman, G. Myburg, Prakash N.K. Deenapanray, W.E. Meyer

115

Electrical Properties and Interface Reaction of Annealed Cu/4H-SiC Schottky Rectifiers

Authors: Tomoaki Hatayama, Kazuaki Kawahito, Hiroshi Kijima, Yukiharu Uraoka, Takashi Fuyuki

925

Fabrication and Characterization of Cr-Based Schottky Diode on n-Type 4H-SiC

Authors: C. Koliakoudakis, J. Dontas, S. Karakalos, M. Kayambaki, S. Ladas, G. Konstantinidis, S. Kennou, Konstantinos Zekentes

651

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