Papers by Keyword: COR

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Abstract: In Section 1, we describe process of ball-bat collision using kinetic model, and derive the post-collision ball speed as a function of the hitting location. Then we differentiate the function and find out where the sweet spot is. The result successfully explains the best location is not at the end of the bat in consistent with our practical experience. In Section 2, based on the model in Section 1, we add two assumptions, supposing corking only influences mass and moment of inertia of bat. Then the maximum outgoing ball speed is only depended on mass of bat. The result shows properly corking will enhance the bat performance. In Section 3, we explain “trampoline effect” in dynamic model and throw light on energy transformation in collision process. We conclude that COR is related to materials, and aluminum bats perform better than wood bats.
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Abstract: Recently, plasma-less gaseous etching processes have attracted attention for their interesting etching properties. Previously, we reported on the etching properties of theses processes for various kinds of oxides and revealed that they reduce the etch rate of the chemical-vapor-deposited (CVD) oxides more than the conventional wet etching process does [1]. Our results also revealed that depressions called divots in the CVD oxide of the shallow trench isolation (STI) became smaller in size by substituting a plasma-less gaseous etching process for the conventional wet etching process. In semiconductor manufacturing, many processes are used to remove oxides damaged during ion implantation or reactive ion etching on the device surface. Therefore, it is very important to understand the etching properties of plasma-less gaseous etching processes for damaged oxides as well as those for other kinds of oxides. In this report, we evaluate the etching properties of one particular plasma-less gaseous etching process for oxide films damaged during the ion implantation process under various conditions and discuss the mechanism of interesting etching properties for the damaged oxides.
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