Papers by Keyword: Cd_xZn_1-xS

Abstract: A series of Cd_xZn_1-xS (x=0.1~0.9) composite photocatalysts were prepared by coprecipitation method. The above-prepared photocatalysts were characterized by X-ray diffraction (XRD), UV-Vis diffusive reflectance spectroscopy (DRS),surface photovoltage spectroscopy (SPS). It was shown from XRD that Cd_xZn_1-xS solid solution semiconductors were of hexagonal phase in agreement with pure CdS. The DRS and SPS results showed that the band gap energy gradually reduced with the increasing of x value in Cd_xZn_1-xS, and when x = 0.7, the Cd_0.7Zn_0.3S photocatalyst had the strongest surface photovoltage. It was found from photocatalytic reduction of CO₂ that the highest HCOOH production rate of 342.64 μmol/(g•h) over Cd_0.7Zn_0.3S photocatalyst among a series of Cd_xZn1-xS photocatalysts were obtained under 250 W high pressure mercury lamp.

Abstract: Thin nanocrystalline CdS and CdxZn1-xS films have been synthesized on InP(100), Si(100), GaAs (100), sapphire(100) and fused silica substrates at low pressure (5 × 10^-2-2 × 10 ^-1Torr)and in the temperature range of 473-673 K by remote plasma enhanced chemical vapor deposition (RPECVD) using Cd(S₂CN(C₂H₅)₂)₂·C₁₂H₈N₂ and Cd/Zn(S₂CN(C₂H₅)₂)₂·C₁₀H₈N₂ as single-source precursors. The influence of deposition conditions and type of substrates on physical and chemical properties of these films has been studied by X-ray diffraction of synchrotron radiation, HREM, SEM, SAED, ellipsometry, IR- and Raman spectroscopies, and EDS.