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Articles by keyword: «Channeling»

• 2D Simulation of under-Mask Penetration in 4H-SiC Implanted with Al⁺ Ions
  Published in: Silicon Carbide and Related Materials 2010 (p421)
• 4H- and 6H-SiC Rutherford Back Scattering-Channeling Spectrometry: Polytype Finger Printing
  Published in: Silicon Carbide and Related Materials 2000 (p279)
• Application of the Combined Channeling Method at Higher Ion Energies on Cyclotron
  Published in: Materials Science Applications of Ion Beam Techniques (p361)
• Channeled Implants in 6H Silicon Carbide
  Published in: Silicon Carbide and Related Materials - 1999 (p889)
• Damage Distributions Induced by Channeling Implantation of Nitrogen into 6H Silicon Carbide
  Published in: Silicon Carbide and Related Materials - 2002 (p645)
• Damage Evolution in Al-implanted 4H SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p869)
• Damage in III-V Semiconductors from very Low-Energy Process Plasmas
  Published in: Defects and Diffusion in Semiconductors (p61)
• Damage Induced by Argon Ion Implantation in Cubic Zirconia
  Published in: Positron Annihilation - ICPA-12 (p514)
• Damage Reduction in Channeled Ion Implanted 6H-SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p893)
• Defects in Implanted Hg_1-xCd_xTe: Electrical and Structural Characterization
  Published in: Defects and Diffusion in Semiconductors (p21)
• Developments on Positron Scattering Experiments Including Beam Production and Detection
  Published in: Positron Annihilation - ICPA-12 (p640)
• He Ion Beam Channeling in Bi₂Sr₂CaCu₂O_y Single Crystals and Iodine Intercalated Compounds I_xBi₂Sr₂CaCu₂O_y
  Published in: Asian Ceramic Science for Electronics I (p259)
• High-Sensitivity Ion Beam Analytical Method for Studying Ion-Implanted SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p625)
• Ion Beam Analysis and Computer Simulation of Damage Accumulation in Nitrogen Implanted 6H-SiC: Effects of Channeling
  Published in: Silicon Carbide and Related Materials 2004 (p637)
• Ion Channeling Studies in In_xGa_1-xAs / GaAs
  Published in: Semiconductor Materials and Technology (p86)