Papers by Keyword: Chemical Bond Re-Switching

Abstract: A mechanism of g-induced (Co60 g-quanta of 1.25 MeV mean energy) changes in optical properties of ternary As-Ge-S chalcogenide vitreous semiconductors is analysed. It is connected with chemical bond re-switching accompanied by coordination topological defect formation. The origin of these defects for As-Ge-S system is discussed using data of positron annihilation lifetime spectroscopy, IR Fourier reflection measurements and mathematical statistics.