Papers by Keyword: Circular Polarization Degree

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Fabrication and Study of Spin Light-Emitting Nanoheterostructures on the Basis of III-V Semiconductors
Authors: Y.A. Danilov, Y.N. Drozdov, M.V. Dorokhin, V.D. Kulakovskii, M.M. Prokof’eva, S.V. Zaitsev, B.N. Zvonkov
Abstract: Circularly polarized electroluminescence from light-emitting diodes based on InGaAs/GaAs heterostructures with adjacent ferromagnetic delta-doped layer has been investigated. It was found that delta-layer placed near (at 2-10 nm) the quantum well (QW) causes circular polarization of its electroluminescence due to an s,p-d exchange interaction between holes in the quantum well and Mn ions in the delta-layer. The dependence of circular polarization degree on main technology parameters is discussed.
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