Papers by Keyword: Contamination Control

Abstract: This presentation focuses on semiconductor wafer cleaning technology, one of the most critical technologies in semiconductor device manufacturing for obtaining high yield and reliability, and discusses the past, present, and future of the technology. Emphasis is placed on the review of contamination control and cleaning technologies in the early days since the invention of the transistor. To celebrate the 30+1-year anniversary of the UCPSS, a review will be given of both the first conference held in Leuven in 1992 and the second one held in Bruges in 1994. There will be more research challenges and business opportunities in environmentally benign, innovative damage-free wafer cleaning and surface preparation technologies for future applications.

Abstract: Several attempts have recently been made to use novel high-k dielectric materials, such as AlxOy, HfxAlyOz, HfxSiyOz, and HfxOy, to improve electrical device characteristics of advanced devices. Moreover, it is becoming increasingly important in the ULSI manufacturing process to suppress contamination by metal or particles from the wafer backside or edge. This paper reviews the wafer backside/edge control technology for suppression of metal contamination.

Abstract: Contamination control has become a high-centered issue for the fabrication yield, performance and reliability of leading-edge ULSI devices. With the progress of sizing down dimensions in higher-density devices, complicated device structures and various novel electronic materials have been introduced, particularly in the latest devices such as CMOS and nonvolatile memory LSIs (Table I). On the other hand, high productivity is a necessity when you consider QTAT (quick turnaround time) and cost-effective flexible ULSI manufacturing lines. Therefore, effective contamination control coupled with adequate protocol has become essential in such production lines. The point of the protocol is minimization of damage caused by impurity metals diffused from these novel electronic materials [1-5].