Papers by Keyword: DX Center

Paper TitlePage

Vacancy Defects in GaAs and AlGaAs Studied by Positron Spectroscopy under Photoexcitation
Authors: Kimmo Saarinen, J. Mäkinen, Pekka J. Hautojärvi, S. Kuisma, T. Laine, C. Corbel, C. LeBerre
501
Defects in Semiconductors: Recent Progress in Positron Experiments
Authors: Pekka J. Hautojärvi
47
On the Electron Capture Kinetics of DX Centers in AlxGa1-xAs:Si
Authors: G. Stöger, G. Brunthaler, G. Ostermayer, W. Jantsch, Zbysław Wilamowski, K. Köhler
1149
Reduction of Spatial Correlations Amongst DX Charges Owing to Capture of Photoexcited Electrons into a Localized Donor State in Al0.35Ga0.65As
Authors: A. Baraldi, F. Colonna, C. Ghezzi, Andrea Parisini
1129
Evidence for Alloy Splitting of the Te DX State in AlxGa1-xAs
Authors: G. Ostermayer, W. Jantsch, Z.R. Żytkiewicz, Zbysław Wilamowski
1123
Energy Shifts Due to the Local Environment of DX Centers in Alx Ga1-x As:Si
Authors: V. Mosser, Sylvie Contreras, P. Lorenzini, Jean-Louis Robert
1117
Hole Capture by the DX Center in AlGaAs Schottky Barriers
Authors: R. Mosca, E. Gombia, C. Ghezzi, P. Frigeri, A. Bosacchi, S. Franchi
1111
Determination of the Decay Rate of Photoionized Te Atoms Implanted in GaAs and Al.3Ga.7As by Mössbauer Spectroscopy
Authors: H. Bemelmans, G. Borghs, G. Langouche
1105
The Ultrasonics-Induced-Quenching of PPC Related to DX Centers in AlxGa1-xAs
Authors: A.E. Belyaev, Hans Jürgen von Bardeleben, M.L. Fille, E. Oborina, Yu.S. Ryabchenko, A.U. Savchuk, Moissei K. Sheinkman
1057
Coexistence of Two Localised States of the Ge Donor in GaAs as Evidenced by a Huge Increase of the Electron Mobility at PPC Conditions
Authors: Czeslaw Skierbiszewski, P. Wiśniewski, T. Suski, Zbysław Wilamowski, G. Ostermayer, W. Jantsch, P. Walker, N.J. Mason, J. Singleton
1013
Showing 1 to 10 of 13 Paper Titles