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Articles by keyword: «DX Center»

• Coexistence of Two Localised States of the Ge Donor in GaAs as Evidenced by a Huge Increase of the Electron Mobility at PPC Conditions
  Published in: Defects in Semiconductors 17 (p1013)
• Defects in Semiconductors: Recent Progress in Positron Experiments
  Published in: Positron Annihilation - ICPA-10 (p47)
• Determination of the Decay Rate of Photoionized Te Atoms Implanted in GaAs and Al_.3Ga_.7As by Mössbauer Spectroscopy
  Published in: Defects in Semiconductors 17 (p1105)
• Energy Shifts Due to the Local Environment of DX Centers in Al_x Ga_1-x As:Si
  Published in: Defects in Semiconductors 17 (p1117)
• Evidence for Alloy Splitting of the Te DX State in Al_xGa_1-xAs
  Published in: Defects in Semiconductors 17 (p1123)
• Free-Carrier Saturation in III-V Compound Semiconductors
  Published in: Shallow Impurities in Semiconductors V (p435)
• Hole Capture by the DX Center in AlGaAs Schottky Barriers
  Published in: Defects in Semiconductors 17 (p1111)
• Influence of DX Center Structure on Si Modulation δ-Doping in AlGaAs/GaAs Quantum Wells
  Published in: Defects in Semiconductors 17 (p641)
• Multiplicity and Lattice Relaxation of DX Center in AlGaAs: Si Studied by Electron Emission Spectra under Pressure
  Published in: Shallow Impurities in Semiconductors V (p447)
• On the Electron Capture Kinetics of DX Centers in Al_xGa_1-xAs:Si
  Published in: Defects in Semiconductors 17 (p1149)
• Reduction of Spatial Correlations Amongst DX Charges Owing to Capture of Photoexcited Electrons into a Localized Donor State in Al_0.35Ga_0.65As
  Published in: Defects in Semiconductors 17 (p1129)
• The Ultrasonics-Induced-Quenching of PPC Related to DX Centers in Al_xGa_1-xAs
  Published in: Defects in Semiconductors 17 (p1057)
• Vacancy Defects in GaAs and AlGaAs Studied by Positron Spectroscopy under Photoexcitation
  Published in: Positron Annihilation - ICPA-10 (p501)