Papers by Keyword: Debye Length

Abstract: The characteristics, such as electron temperature and the electron density, of CF4/Ar discharge in 2.45GHz microwave has been investigated by using a Langmuir probe with the microwave power and position. The results showed that the electron temperature and the electron density decrease with increasing distance from the plasma source. Increasing power enhances the dissociation and ionization of gas, and increases the electron densities. The electron temperature was decreased by reducing the mean free path of electrons with increasing microwave power. The electron temperature is 7.63 ~ 2.49 eV, and the electron density is 0.85×1011 ~ 4.3×1011 cm-3. From obtained electron energy distribution function, we known that high energy electron decreased with increasing microwave power and distance from the plasma source. The generated plasma by developed our system has good quality as results of Debye length λD = 35.8 ~ 67.3 μm, and Ln(ND) = 33.4 ~ 35.2.

Abstract: In order to understand carrier statistics in phosphorus-doped n-type diamond, electron statistics involving compensation and deep-dopant effect are theoretically analyzed. For n-diamond with a compensation ratio (c) larger than 1x10-4, the electron concentration (n) at room temperature (RT) is insensitive to the donor concentration (ND) and reduced with increasing the c value. On the other hand, for diamond with a c value smaller than 1x10-4, the n value at RT increases with increasing the ND value and is insensitive to the c value. Similarly, the length of Debye tailing (ln) at RT is reduced with increasing the c value for n-diamond with c>1x10-4 and is insensitive to the c value for n-diamond with c<1x10-4. However, it is found that an increase of temperature is effective to increase the n value and to reduce the ln value. The n value as large as 1015 cm-3 and the ln value as small as 100 nm are expected to be achieved at an elevated temperature of 473 K.