Papers by Keyword: Device Fabrication

Abstract: This study focuses on the trench etching process for the fabrication of SiC Superjunction Schottky diodes, utilizing an ICP-RIE technique. Through a series of experiments, we optimized the etching parameters, including ICP power, RF power, and SF₆ gas flow rates, to achieve etching rates ranging from 157 nm/min to 372.1 nm/min. Additionally, the study identified the performance of the hard mask as a critical issue during the etching process, which was improved by reducing the RF power below 80 w. The deepest trench achieved reached a depth of 21 μm at 75 w RF power, 1000 w ICP power and 40 sccm SF₆, confirming the feasibility of this approach for fabricating high-performance SiC superjunction devices.

Abstract: This paper presents experimental 1.2 kV, 10 A SiC thyristors with different amplifying gate design. In contrast to comparative devices (with simple gate) the amplifying gate thyristors show a characteristic snap-back and a higher gate current to trigger. Their gate-anode I-V characteristics comply with the underlying design constraint, regarding the resistances of pilot and main thyristor: (R_P > R_M). Moreover, the turn-on waveforms of well-designed amplifying gate thyristors reveal peak-shaped inversions in the gate current and voltage transients, providing clear evidence of the successive triggering of pilot and main thyristor.

Abstract: The idea of generating electricity from plastics itself sounds enthralling, but it is equally challenging to achieve in the lab and then take it to the production level. Polymer Solar Cells (PSCs) have the advantage of lower cost and flexibility but they do suffer from problems like low efficiency and smaller service life which is mainly due to limited absorption spectra, poor charge mobility and the degradation of the polymers. A combination of narrow band donor and fullerene derivative is one of the possible approaches to fabricate a working device. In this work, various experimental techniques have been optimised in order to achieve better efficiency of the PSCs in atmospheric condition. Optimized parameters from polymer mixing ratio, spin coating, annealing and others were used to enhance efficiency of device. Parameters were optimized with the help various techniques viz. Viscometer, Thermo Gravity Analysis, UV-vis spectroscopy, Scanning Electron Microscopy and I-V measurement system. We report 0.76% efficiency in these solar cells, which were fabricated in open atmospheric condition. The as-prepared device showed a good performance with an open-circuit voltage (V_oc) 0.74 V, short circuit current (I_sc) 0.6 mA, a fill factor (FF) of 35%.

Abstract: This paper reports fabrication and electrical characterization of 6H-SiC n-channel, depletion-mode, junction-field-effect transistors (JFETs) for use in high-temperature analog integrated circuits for sensing and control in propulsion, power systems, and geothermal exploration. Electrical characteristics of the resulting JFET devices have been measured across the wafer as a function of temperature, from room temperature to 450oC. The results indicate that the JFETs are suitable for high-gain amplifiers in high-temperature sensor signal processing circuits.