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Articles by keyword: «Dielectric Breakdown»

• A Long-Term Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer
  Published in: Silicon Carbide and Related Materials 2003 (p1269)
• Dielectric Breakdown Statistics of Polyethylene for Progressively-Censored Data
  Published in: Advanced Materials Forum II (p602)
• Effect of High-Voltage Screening on Titania Ceramics with Different Surface Finishing
  Published in: Electroceramics in Japan VI (p199)
• Effect of Reactive-Ion Etching on Thermal Oxide Properties on 4H-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p983)
• Effects of Dislocations on Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer
  Published in: Silicon Carbide and Related Materials 2004 (p661)
• Emission Phenomenon Observation of Thermal Oxides Grown on N-Type 4H-SiC (0001) Wafer
  Published in: Silicon Carbide and Related Materials 2010 (p378)
• Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process
  Published in: Silicon Carbide and Related Materials - 2002 (p725)
• High-Reliability ONO Gate Dielectric for Power MOSFETs
  Published in: Silicon Carbide and Related Materials 2004 (p677)
• Impact of Dislocations on Gate Oxide in SiC MOS Devices and High Reliability ONO Dielectrics
  Published in: Silicon Carbide and Related Materials 2005 (p955)
• Infrared Spectroscopy Studies of Aged Polymeric Insulators
  Published in: Advanced Materials Forum I (p384)
• Local Dielectric Degradation of Cu-Contaminated SiO₂ Thin Films
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p641)
• Low-Temperature Post-Oxidation Annealing Using Atomic Hydrogen Radicals Generated by High-Temperature Catalyzer for Improvement in Reliability of Thermal Oxides on 4H-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p999)
• Non-Contact Measurement of Acoustic Emission in Thin Specimen by Laser Interferometer
  Published in: Advances in Nondestructive Evaluation (p485)
• Reliability of Thermal Oxides Grown on n-Type 4H-SiC Implanted with Low Nitrogen Concentration
  Published in: Silicon Carbide and Related Materials 2007 (p779)