Papers by Keyword: Dislocation Network

Abstract: Dislocation structures at the seed/grown-crystal interface in PVT-grown 4H-SiC crystals are investigated. The dislocation density is found to show a sharp increase at the interface and its main contribution is probably ascribable to TEDs which stem from BPDs generating at the interface through the structural transformation. Intense TEM observations reveal an intriguing in-plane distribution structure of the interface BPDs; the BPDs form a two-dimensional dislocation network comprising of {-1100} partial dislocations associated with expanded areas of stacking faults at the nodes of the network.

Abstract: Effect of pre-treatments before austenitization on mechanical properties in steels has been investigated. Pre-treatments are cold rolling and isothermal holding below A₁ before austenitization. Pre-treatments were performed in order to introduce dislocation network in austenite (γ), which acts as nucleation site for “bainite laths within γ grain (BWING)”. During the pre-treatment of isothermal holding below A₁, carbon segregation and/or carbide formation might occur at grain boundary of ferrite (α). Thin γ layer might be formed around the region where carbon segregation and/or carbide formation occurred in the beginning of austenitization. Transformation strain due to α → γ would be effectively relaxed by the deformation of thin γ film, because α had been already hardened by the cold rolling. Dislocations might be introduced dominantly into the thin γ film, and stable dislocation network even in the high temperature region of γ might be formed. BWING nucleates around the dislocation network to relax the strain field around dislocation network. BWING would nucleate also at ( BWING / γ ) interface cooperatively to relax the strain around the interface, resulting in the formation of “aggregate of bainite laths with nearly parallel slip systems between neighboring bainite laths (ALPS)”. Larger ALPS containing a lot of BWINGs might be formed in the pre-treated steel, and improves tensile strength and toughness.

Abstract: Aggregate of bainite laths with almost parallel slip systems between neighboring bainite laths, hereafter referred to as ALPS, has great effect on the improvement of mechanical properties in steels. Elongation increases remarkably with increasing the number of bainite laths within an ALPS. When a bainite lath begins to deform, the neighboring bainite lath also easily deforms to relax the deformation strain, because of good parallelism between their slip systems. Under the cooperative deformation of bainite laths, the area of interface between neighboring bainite laths increases during deformation. The increase in the area of interface between neighboring bainite laths suppresses localization of dislocations at the interface, that is, dislocation density per unit area of the interface between neighboring bainite laths hardly increases, resulting in the suppression of nucleation of cracks at the interface between neighboring bainite laths. Ductile fracture would occur along the boundary between ALPSs. It could be suggested that larger ALPS and/or ALPS consisting of large number of bainite laths induce larger elongation in steels.On the other hand, it has been reported that tensile strength increases in proportion to inverse of square root of d, the d being the average size of bainite laths [1]. In order to form fine bainite lath, dislocation network instead of inclusion in austenite was utilized as nucleation site for bainite lath. Great barriers to be overcome exist for the improvement of both strength and toughness. An idea for the improvement of both strength and toughness is shown in this study.

Abstract: The kinetics of hydrogen penetration through dislocation networks produced by silicon wafer bonding are investigated by means of reverse bias annealing (RBA) procedure. By using the combination of capacitance-voltage (CV) profiling of net-acceptor concentration and deep level transient spectroscopy (DLTS) the total concentration of H introduced in the samples during wet–chemical etching at room temperature was defined. Two processes with the different time constants τ₁ and τ₂ was found for the bonded sample. The slow process τ₁ with an activation energy of (1.25±0.13) eV was analogous to that in the reference sample and corresponded to the dissociation of boron-hydrogen pairs. The fast process τ₂ was found to exhibit a lower activation energy of (0.87±0.25) eV and was identified as the release of hydrogen bound at screw dislocations by their elastic strains.

Abstract: Shallow dislocation-related electronic states near the bottom of the conduction band in n-type Si bonded sample have been investigated with deep-level transient spectroscopy (DLTS), isothermal transient spectroscopy (ITS) and energy-resolved DLTS. The effect of thermoemission (TE) enhancement in external electric field was found and the dependence of the TE activation energy reduction as a function of the filling grade was obtained for these states. A new model of dislocation-strain-related Poole-Frenkel effect that accounts for the own electric field of internal charge of dislocation line is suggested and compared with the experimental data.

Abstract: The influence of GBs contained in the channel of MOS-FETs - fabricated in thin SOI layers - is demonstrated. The drain current measured at room temperature increases about 50 times for nFETs and about 10 times for pFETs, respectively, as compared to reference devices. The observations might be interpreted as a strong increase of the mobility of charge carriers. Moreover, the observed stepwise changes of the drain current at 5 K may point to Coulomb blockades.

Abstract: Split Hopkinson pressure bar setup was used as experimental method for dynamic impacted testing at 573K at the strain rate of 7030s-1. The microstructure of Al-5.8Cu aluminum alloy impacted plate was characterized by transmission electron microscopy (TEM). The findings indicated that dislocation network of Al matrix was observed, which was attributed to isothermal and adiabatic process during impaction. The researched results indicated the dislocation network of Al matrix was inhabited by coarsened precipitate in Al-5.8Cu alloy impacted plate.

Abstract: The dislocation-related luminescence (DRL) in the vicinity of D1 band (0.8 eV) in hydrophilically bonded n- and p-type silicon wafers is investigated by means of recently developed pulsed trap refilling enhanced luminescence technique (Pulsed-TREL). The shallow and deep dislocation related electronic states in both upper and lower part of the band gap are determined and characterized by means of DLTS. Among those traps we have established ones which directly participate in D1 DRL. We have shown that D1 luminescence goes via shallow dislocation related states (SDRS) located close to the conduction and valence bands with thermal activation energy of about 0.1 eV whereas deep levels do not participate in D1 DRL. The model explaining the fact how the 0.8 eV luminescence may go through levels which interlevel energy is at least 0.97 eV in terms of Coulomb interaction between ionized SDRS is suggested.

Abstract: The investigation of regular dislocation networks (DN) formed by direct wafer bonding suggests that the D1 and D2 peaks of dislocation-related luminescence (DRL) in silicon is linked to screw dislocations, whereas edge dislocations are responsible for D3 and D4 DRL peaks. Non-radiative recombination activity in DN could be attributed to edge dislocations and could be related to enhanced ability of these dislocations to getter impurity atoms. Obtained relation of DRL intensity with the density of screw dislocations suggests existence of the optimum twist angle for the wafer-bonding geometry for which the DRL intensity has a maximum. The dependence of DRL intensity on the spacing between screw dislocations has the maximum at about 7 nm. Reported radiative and non-radiative recombination properties of DN present substantial interest not only for possible LED applications in all-Si photonics but also for photovoltaics, since DNs represent a model system for grain boundaries controlling carrier lifetime in microcrystalline-Si material.

Abstract: The results of experimental investigations of the dislocation-related DLTS-peaks originated from the dislocation networks (DN) are presented. Samples with DNs were produced by direct bonding of p-type silicon wafers and no enhancement of oxygen concentration was detected near the DN plane. Origins of the DLTS peaks were proposed and a correlation with the dislocation-related photoluminescence data was established based on known dislocation structure of the samples. Two types of shallow DLTS peaks exhibited Pool-Frenkel effect, which could be linked to the dislocation deformation potential. One of the shallow DLTS peaks was related to straight parts of screw dislocations and another - to the intersections of the dislocations.